• CSD88537ND SOP8
CSD88537ND SOP8

CSD88537ND

60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND

Quantity Unit Price(USD) Ext. Price
1 $0.661 $0.66
10 $0.540 $5.40
30 $0.482 $14.46
100 $0.421 $42.10
500 $0.385 $192.50
1000 $0.369 $369.00

Inventory:8,483

*The price is for reference only.
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  • Part Number : CSD88537ND

  • Package/Case : SOP8

  • Brands : TI

  • Components Categories : FETs, MOSFETsFET, MOSFET Arrays

  • Datesheet : CSD88537ND DataSheet (PDF)

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Overview of CSD88537ND

The CSD88537ND is a NexFET™ power MOSFET featuring an optimized ultra-low Qg (gate charge), ideal for high-frequency switching applications. It is designed to deliver efficient power management solutions with low power losses and high reliability.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VSS: Substrate Connection
  • VDD: Positive Power Supply
  • EN: Enable Pin
  • FB: Feedback Pin
  • BST: Bootstrap Supply
  • COMP: Compensation Pin
  • AGND: Analog Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CSD88537ND MOSFET for visual reference.

Key Features

  • Ultra-Low Qg: The CSD88537ND offers optimized gate charge for high-frequency switching, minimizing power losses and enhancing efficiency.
  • High Efficiency: This MOSFET provides high-efficiency power management solutions for various applications requiring low power dissipation.
  • Enhanced Reliability: With its NexFET™ technology, the CSD88537ND ensures reliable performance and robust operation in demanding conditions.
  • Compact Design: Available in a compact package, this MOSFET offers space-saving advantages for power electronics designs.
  • Low Thermal Resistance: The CSD88537ND features low thermal resistance, facilitating heat dissipation and improving thermal performance.

Note: For detailed technical specifications, please refer to the CSD88537ND datasheet.

Application

  • Power Management: Suitable for power supply units, motor control, DC-DC converters, and other power management applications.
  • Switching Circuits: Ideal for high-frequency switching circuits in telecom, industrial automation, and automotive systems.
  • Voltage Regulation: Used for voltage regulation and power distribution in electronic devices and systems.

Functionality

The CSD88537ND NexFET™ power MOSFET delivers efficient power control with its ultra-low gate charge, catering to high-frequency switching requirements while ensuring reliability and performance.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the driving circuit for proper switching control.
  • Power Supply: Connect the drain (D) and source (S) pins to the power source for desired power management.
  • Enable Pin: Utilize the EN pin to enable or disable the MOSFET based on system requirements.

Frequently Asked Questions

Q: Is the CSD88537ND suitable for automotive power systems?
A: Yes, the CSD88537ND's high efficiency and reliability make it suitable for automotive power systems requiring efficient power management.

Equivalent

For similar functionalities, consider these alternatives to the CSD88537ND:

  • CSD18533Q5A: A NexFET™ MOSFET with similar ultra-low Qg and high-efficiency characteristics.
  • CSD97374Q4M: This power MOSFET offers comparable performance and reliability to the CSD88537ND in power management applications.

CSD88537ND

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

VDS (V) 60 Configuration Dual
Rds(on) at VGS=10 V (max) (mΩ) 15 IDM - pulsed drain current (max) (A) 62
QG (typ) (nC) 14 QGD (typ) (nC) 2.3
QGS (typ) (nC) 4.6 VGS (V) 20
VGSTH typ (typ) (V) 3 ID - silicon limited at TC=25°C (A) 16
ID - package limited (A) 15 Logic level No
Operating temperature range (°C) -55 to 150 Rating Catalog

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