CSD19538Q2
Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R
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Part Number : CSD19538Q2
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Package/Case : WSON-FET-6
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Brands : TI
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : CSD19538Q2 DataSheet (PDF)
The CSD19538Q2 is a NexFET™ power MOSFET designed for high-efficiency power management applications, particularly in automotive and industrial systems. This MOSFET offers low on-resistance and robust thermal performance, making it suitable for various power switching and motor control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the CSD19538Q2 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the CSD19538Q2 datasheet. Functionality The CSD19538Q2 is a high-efficiency power MOSFET designed for power switching and motor control applications. It offers low on-resistance, fast switching speeds, and robust thermal performance, making it a reliable solution for demanding automotive and industrial systems. Usage Guide Q: Is the CSD19538Q2 suitable for automotive applications? Q: What is the maximum operating temperature of the CSD19538Q2? For similar functionalities, consider these alternatives to the CSD19538Q2:Overview of CSD19538Q2
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the CSD19538Q2 is specifically designed to meet automotive quality and reliability standards, making it suitable for automotive powertrain and chassis applications.
A: The maximum operating temperature varies depending on the specific datasheet specifications. Please refer to the datasheet for precise details.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | WSON-FET-6 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 14.4 A | Rds On - Drain-Source Resistance | 59 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.8 V |
Qg - Gate Charge | 5.6 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 20.2 W |
Channel Mode | Enhancement | Tradename | NexFET |
Series | CSD19538Q2 | Brand | Texas Instruments |
Configuration | Single | Fall Time | 2 ns |
Forward Transconductance - Min | 19 S | Height | 0.75 mm |
Length | 2 mm | Product Type | MOSFET |
Rise Time | 3 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 7 ns | Typical Turn-On Delay Time | 5 ns |
Width | 2 mm | Unit Weight | 0.000208 oz |
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