• CSD19538Q2 WSON-FET-6
CSD19538Q2 WSON-FET-6

CSD19538Q2

Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R

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  • Part Number : CSD19538Q2

  • Package/Case : WSON-FET-6

  • Brands : TI

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : CSD19538Q2 DataSheet (PDF)

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Overview of CSD19538Q2

The CSD19538Q2 is a NexFET™ power MOSFET designed for high-efficiency power management applications, particularly in automotive and industrial systems. This MOSFET offers low on-resistance and robust thermal performance, making it suitable for various power switching and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • VSS: Source
  • VDD: Drain
  • G: Gate
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CSD19538Q2 MOSFET for a visual representation.

Key Features

  • High Efficiency: The CSD19538Q2 offers low on-resistance and high switching speeds, resulting in minimal power loss and improved efficiency.
  • Automotive Grade: This MOSFET is designed to meet automotive quality and reliability standards, making it suitable for automotive powertrain and chassis applications.
  • Robust Thermal Performance: With its advanced packaging and thermal design, the CSD19538Q2 ensures reliable operation even in high-temperature environments.
  • Low Gate Charge: The MOSFET features low gate charge, allowing for fast switching and reduced switching losses.
  • Low Side Switching: Suitable for low-side switching applications in automotive and industrial systems.

Note: For detailed technical specifications, please refer to the CSD19538Q2 datasheet.

Application

  • Automotive Powertrain: Ideal for use in automotive powertrain systems such as motor drives, solenoid controls, and DC-DC converters.
  • Industrial Motor Control: Suitable for motor control applications in industrial equipment, including pumps, fans, and compressors.
  • Power Management: Used in various power management applications requiring high-efficiency switching and robust thermal performance.

Functionality

The CSD19538Q2 is a high-efficiency power MOSFET designed for power switching and motor control applications. It offers low on-resistance, fast switching speeds, and robust thermal performance, making it a reliable solution for demanding automotive and industrial systems.

Usage Guide

  • Power Supply: Connect VDD (Drain) to the power supply and VSS (Source) to the load.
  • Gate Control: Apply appropriate gate voltage to control the switching operation of the MOSFET.
  • Thermal Management: Ensure proper thermal dissipation to maintain reliable operation, especially in high-temperature environments.

Frequently Asked Questions

Q: Is the CSD19538Q2 suitable for automotive applications?
A: Yes, the CSD19538Q2 is specifically designed to meet automotive quality and reliability standards, making it suitable for automotive powertrain and chassis applications.

Q: What is the maximum operating temperature of the CSD19538Q2?
A: The maximum operating temperature varies depending on the specific datasheet specifications. Please refer to the datasheet for precise details.

Equivalent

For similar functionalities, consider these alternatives to the CSD19538Q2:

  • IRF540N: A power MOSFET with similar characteristics, suitable for power switching applications in automotive and industrial systems.
  • NTD5867NL: This MOSFET offers comparable performance and reliability for automotive and industrial power management applications.
  • IPP50N20CPXKSA1: An automotive-grade power MOSFET designed for high-efficiency switching and robust thermal performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case WSON-FET-6 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 14.4 A Rds On - Drain-Source Resistance 59 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.8 V
Qg - Gate Charge 5.6 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 20.2 W
Channel Mode Enhancement Tradename NexFET
Series CSD19538Q2 Brand Texas Instruments
Configuration Single Fall Time 2 ns
Forward Transconductance - Min 19 S Height 0.75 mm
Length 2 mm Product Type MOSFET
Rise Time 3 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 7 ns Typical Turn-On Delay Time 5 ns
Width 2 mm Unit Weight 0.000208 oz

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