CSD23280F3
Trans MOSFET P-CH 12V 1.8A 3-Pin PicoStar T/R
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 5 | $0.098 | $0.49 |
| 50 | $0.080 | $4.00 |
| 150 | $0.070 | $10.50 |
| 500 | $0.062 | $31.00 |
| 3000 | $0.056 | $168.00 |
| 6000 | $0.053 | $318.00 |
Inventory:8,162
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
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Part Number : CSD23280F3
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Package/Case : 3-PICOSTAR
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Brands : TI
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : CSD23280F3 DataSheet (PDF)
Overview of CSD23280F3
This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
Key Features
- Low On-Resistance
- Ultra-Low Qg and Qgd
- High-operating drain current
- Ultra-small footprint
- 0.73 mm × 0.64 mm
- Ultra-low profile
- 0.36-mm max height
- Integrated ESD protection diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
- Lead and halogen free
- RoHS compliant
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | CSD23280F3 | Pbfree Code | Yes |
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | Package Description | GRID ARRAY, R-PBGA-B3 |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| HTS Code | 8541.21.00.40 | Date Of Intro | 2016-04-12 |
| Samacsys Manufacturer | Texas Instruments | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DS Breakdown Voltage-Min | 12 V |
| Drain Current-Max (ID) | 1.8 A | Drain-source On Resistance-Max | 0.25 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 11.1 pF |
| JESD-30 Code | R-PBGA-B3 | JESD-609 Code | e4 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL | Pulsed Drain Current-Max (IDM) | 11.4 A |
| Surface Mount | YES | Terminal Finish | NICKEL GOLD |
| Terminal Form | BUTT | Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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