• CSD19533Q5A TDFN-8
CSD19533Q5A TDFN-8

CSD19533Q5A

Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R

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  • Part Number : CSD19533Q5A

  • Package/Case : TDFN-8

  • Brands : TI

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : CSD19533Q5A DataSheet (PDF)

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Overview of CSD19533Q5A

The CSD19533Q5A is an advanced N-channel NexFET™ power MOSFET designed for high-efficiency power management applications. It features a low on-state resistance and high switching performance, making it ideal for use in synchronous buck converters and other power supply designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate driver connection
  • SOURCE: Source terminal
  • DRAIN: Drain terminal
  • VSS: Substrate connection
  • VDD: Drain voltage
  • VSS: Source connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CSD19533Q5A MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The CSD19533Q5A offers a low RDS(on) for efficient power management.
  • High Switching Performance: This MOSFET provides fast switching speeds for improved power converter efficiency.
  • Robust Design: Designed to withstand high power levels and temperature variations for reliable operation.
  • Integrated Protection Features: Includes built-in protection against overcurrent and thermal issues for enhanced safety.
  • Compact Package: Available in a space-saving and thermally efficient package for easier PCB layout.

Note: For detailed technical specifications, please refer to the CSD19533Q5A datasheet.

Application

  • Power Management: Ideal for use in synchronous buck converters, voltage regulators, and power supplies.
  • Motor Control: Suitable for motor drive applications requiring efficient power switching.
  • DC-DC Converters: Used in various DC-DC converter circuits for voltage regulation and power distribution.

Functionality

The CSD19533Q5A MOSFET is designed to efficiently switch high power levels in power management applications, ensuring proper voltage regulation and power delivery.

Usage Guide

  • GATE Connection: Connect the gate pin to the driver circuit for proper switching control.
  • Power Connections: Connect the drain and source terminals to the corresponding power supply and load connections.
  • Thermal Considerations: Ensure proper heat sinking to maintain MOSFET temperature within safe limits.

Frequently Asked Questions

Q: Is the CSD19533Q5A suitable for high-frequency switching applications?
A: Yes, this MOSFET is capable of high-speed switching suitable for various power management needs.

Equivalent

For similar functionalities, consider these alternatives to the CSD19533Q5A:

  • CSD18533Q5A: A related NexFET™ MOSFET with similar performance characteristics for power applications.
  • CSD17533Q5A: Another member of the NexFET™ family offering comparable features and functionality to the CSD19533Q5A.

CSD19533Q5A

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

VDS (V) 100 Configuration Single
Rds(on) at VGS=10 V (max) (mΩ) 9.5 IDM - pulsed drain current (max) (A) 231
QG (typ) (nC) 27 QGD (typ) (nC) 4.9
QGS (typ) (nC) 7.9 VGS (V) 20
VGSTH typ (typ) (V) 2.8 ID - silicon limited at TC=25°C (A) 75
ID - package limited (A) 100 Logic level No
Operating temperature range (°C) -55 to 150 Rating Catalog

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