• CSD17309Q3 8-VSON-CLIP (3.3x3.3)
  • CSD17309Q3
CSD17309Q3 8-VSON-CLIP (3.3x3.3)
CSD17309Q3

CSD17309Q3

30V, N ch NexFET MOSFET™, single SON3x3, 6.3mOhm

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  • Part Number : CSD17309Q3

  • Package/Case : 8-VSON-CLIP (3.3x3.3)

  • Brands : TI

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : CSD17309Q3 DataSheet (PDF)

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Overview of CSD17309Q3

The CSD17309Q3 is an advanced dual-channel NexFET power MOSFET designed for high-performance power management applications.This MOSFET features low RDS(on) values and high efficiency,making it ideal for power conversion and motor control applications.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CSD17309Q3 for a visual representation.

Key Features

  • Dual-Channel NexFET MOSFET:Provides two channels for efficient power management.
  • Low RDS(on):Features low on-state resistance for minimal power loss and high efficiency.
  • High Efficiency:Offers high efficiency in power conversion and motor control applications.
  • Fast Switching Speed:Provides fast switching characteristics for responsive power management.
  • Temperature Protection:Includes temperature protection features to ensure safe operation under varying conditions.

Note:For detailed technical specifications,please refer to the CSD17309Q3 datasheet.

Application

  • Power Conversion Systems:Suitable for use in power conversion systems requiring efficient MOSFET switching.
  • Motor Control:Ideal for motor control applications where high efficiency and fast switching speeds are essential.
  • Power Management Units:Used in power management units to regulate and control power flow in electronic devices.

Functionality

The CSD17309Q3 is a dual-channel NexFET power MOSFET designed for high efficiency and low RDS(on) values.It provides reliable power management solutions for various applications.

Usage Guide

  • Gate Control:Apply appropriate gate drive signals to control the switching operation of the MOSFET channels.
  • Power Connections:Connect the drain and source pins to the power supply and load circuit respectively.
  • Thermal Management:Ensure proper thermal management to prevent overheating and maintain efficient operation.

Frequently Asked Questions

Q:Does the CSD17309Q3 require external gate drivers for operation?
A:Yes,external gate drivers are recommended to drive the gate of the MOSFET for optimal performance.

Equivalent

For similar functionalities,consider these alternatives to the CSD17309Q3:

  • CSD18533Q5A:Another dual-channel NexFET MOSFET with comparable features and performance.
  • CSD16322Q3:This MOSFET offers similar characteristics to the CSD17309Q3 for power management applications.

CSD17309Q3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid CSD17309Q3 Pbfree Code Yes
Rohs Code No Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC Package Description SMALL OUTLINE, S-PDSO-N5
Pin Count 8 Reach Compliance Code not_compliant
ECCN Code EAR99 HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 162 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 60 A Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.0085 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 56 pF JESD-30 Code R-PDSO-N8
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.8 W Pulsed Drain Current-Max (IDM) 112 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form NO LEAD
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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