• AO4435 8-SOIC
AO4435 8-SOIC

AO4435

Trans MOSFET P-CH 30V 10.5A 8-Pin SOIC

Quantity Unit Price(USD) Ext. Price
5 $0.115 $0.58
50 $0.094 $4.70
150 $0.084 $12.60
500 $0.077 $38.50
3000 $0.059 $177.00
6000 $0.056 $336.00

Inventory:4,312

*The price is for reference only.
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Overview of AO4435

The AO4435 is a P-channel enhancement mode field-effect transistor (FET) designed for low voltage applications. This transistor features a low on-resistance and fast switching characteristics, making it suitable for power management and load switching applications in portable devices.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AO4435 for a visual representation.

Key Features

  • P-Channel MOSFET: The AO4435 is a P-channel MOSFET designed for low voltage applications.
  • Low On-Resistance: This FET offers a low on-resistance for efficient power management.
  • Fast Switching Speed: The AO4435 provides fast switching characteristics, suitable for high-frequency applications.
  • Compact Package: Available in a compact SOT-23 package for space-constrained designs.
  • High Power Dissipation: With its power dissipation capabilities, the AO4435 can handle moderate power loads efficiently.

Note: For detailed technical specifications, please refer to the AO4435 datasheet.

Application

  • Power Management: Ideal for power management tasks in low voltage circuits and portable devices.
  • Load Switching: Suitable for load switching applications where low on-resistance is essential.
  • Battery Charging: Can be used in battery charging circuits and power supply control.

Functionality

The AO4435 is a P-channel enhancement mode FET that provides efficient power management and switching capabilities in low voltage applications. It offers reliable performance for various power control tasks.

Usage Guide

  • G: Connect the Gate pin for controlling the FET.
  • D: Connect the Drain pin as the output terminal for power flow.
  • S: Connect the Source pin to the ground or common reference point.

Frequently Asked Questions

Q: Can the AO4435 be used in automotive applications?
A: Yes, the AO4435 is suitable for automotive applications with appropriate voltage and current ratings.

Equivalent

For similar functionalities, consider these alternatives to the AO4435:

  • AON6403: A similar P-channel MOSFET with enhanced performance characteristics.
  • BSS84: This P-channel MOSFET offers comparable features to the AO4435 for low voltage applications.

AO4435

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Obsolete
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8 Pin Count 8
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer Alpha & Omega Semiconductors Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (Abs) (ID) 10.5 A
Drain Current-Max (ID) 10.5 A Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-G8
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 3.1 W
Qualification Status Not Qualified Surface Mount YES
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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