• AO3418 SOT-23-3
AO3418 SOT-23-3

AO3418

Trans MOSFET N-CH 30V 3.8A 3-Pin SOT-23

Quantity Unit Price(USD) Ext. Price
5 $0.079 $0.40
50 $0.063 $3.15
150 $0.055 $8.25
500 $0.050 $25.00
3000 $0.045 $135.00
6000 $0.043 $258.00

Inventory:4,454

*The price is for reference only.
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Overview of AO3418

The AO3418 is a P-channel enhancement mode field-effect transistor (FET) designed for use in power management applications. This transistor features a low on-state resistance and high thermal efficiency, making it suitable for various power switching and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AO3418 transistor for a visual representation.

Key Features

  • P-Channel FET: The AO3418 is a P-channel FET suitable for power management applications.
  • Low On-State Resistance: This transistor offers low on-state resistance for efficient power handling.
  • High Thermal Efficiency: The AO3418 exhibits high thermal efficiency, enabling reliable performance under various operating conditions.
  • Enhancement Mode: Operating in enhancement mode allows for easy control of the transistor's conduction.

Note: For detailed technical specifications, please refer to the AO3418 datasheet.

Application

  • Power Switching: Ideal for power switching applications due to its low on-state resistance and high thermal efficiency.
  • Power Amplification: Can be used for power amplification tasks where P-channel FETs are required.
  • Voltage Regulation: Suitable for voltage regulation and power management circuits in electronic devices.

Functionality

The AO3418 is a P-channel FET that can efficiently control power flow in various circuits. Its low on-state resistance and high thermal efficiency make it a versatile component for power management applications.

Usage Guide

  • Gate Control: Apply appropriate gate-source voltage to control the conduction of the transistor.
  • Load Connection: Connect the load between the drain and the power source for power switching applications.
  • Heat Dissipation: Ensure proper heat sinking to maintain the high thermal efficiency of the AO3418.

Frequently Asked Questions

Q: Is the AO3418 suitable for high-current applications?
A: Yes, the AO3418 features a low on-state resistance, making it suitable for high-current applications where efficient power handling is required.

Equivalent

For similar functionalities, consider these alternatives to the AO3418:

  • AO3400: A similar P-channel FET with comparable performance characteristics and pinout.
  • AO3401: Another alternative from the same series, offering slightly different specifications while maintaining high thermal efficiency.

AO3418

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Samacsys Manufacturer Alpha & Omega Semiconductors
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 3.8 A Drain Current-Max (ID) 3.8 A
Drain-source On Resistance-Max 0.055 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25 pF JESD-30 Code R-PDSO-G3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 1.4 W
Power Dissipation-Max (Abs) 1.4 W Pulsed Drain Current-Max (IDM) 15 A
Surface Mount YES Terminal Form GULL WING
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON

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