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A1P25S12M3

Trans IGBT Module N-CH 1200V 25A 197W 22-Pin ACEPACK-1 Tray

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  • Part Number : A1P25S12M3

  • Package/Case : ACEPACK™ 1

  • Brands : STMicroelectronics

  • Components Categories : IGBT Modules

  • Datesheet : A1P25S12M3 DataSheet (PDF)

Quick Inquiry

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Overview of A1P25S12M3

This power module is a sixpack topology in an ACEPACK™ 1 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz.

Key Features

  • ACEPACK™ 1 power module
    • DBC Cu Al2O3 Cu
  • Sixpack topology
    • 1200 V, 25 A IGBTs and diodes
    • Soft and fast recovery diode
  • Integrated NTC

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer STMicroelectronics Product Category IGBT Modules
RoHS Details Product IGBT Silicon Modules
Configuration 6-Pack Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.95 V Continuous Collector Current at 25 C 25 A
Gate-Emitter Leakage Current 500 nA Pd - Power Dissipation 197 W
Package / Case ACEPACK1 Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C Brand STMicroelectronics
Maximum Gate Emitter Voltage 20 V Mounting Style Through Hole
Product Type IGBT Modules Series A1P25S12M3
Factory Pack Quantity 18 Subcategory IGBTs
Technology Si Tradename ACEPACK
Unit Weight 0.881849 oz

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