2SK3569
MOSFET N-Ch 600V 10A Rdson 0.75 Ohm
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $2.867 | $2.87 |
10 | $2.516 | $25.16 |
50 | $2.306 | $115.30 |
100 | $2.096 | $209.60 |
500 | $1.998 | $999.00 |
1000 | $1.954 | $1,954.00 |
Inventory:5,480
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
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Part Number : 2SK3569
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Package/Case : TO-220FP-3
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Brands : TOSHIBA
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Components Categories : Power Field-Effect Transistors
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Datesheet : 2SK3569 DataSheet (PDF)
Overview of 2SK3569
Switching Regulator Applications• Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.)• High forward transfer admittance: |Yfs| = 8.5 S (typ.)• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)• Enhancement mode: Vth = 2.0 ~ 4.0 V (VDS = 10 V, ID = 1 mA)
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | 2SK3569 | Pbfree Code | Yes |
Part Life Cycle Code | Lifetime Buy | Ihs Manufacturer | TOSHIBA CORP |
Part Package Code | SC-67 | Package Description | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
Pin Count | 3 | Reach Compliance Code | |
ECCN Code | EAR99 | Samacsys Manufacturer | Toshiba |
Avalanche Energy Rating (Eas) | 363 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 600 V | Drain Current-Max (ID) | 10 A |
Drain-source On Resistance-Max | 0.75 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 40 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Manufacturer | Toshiba |
Product Category | MOSFET | RoHS | N |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-220FP-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 10 A | Rds On - Drain-Source Resistance | 750 mOhms |
Series | 2SK3569 | Brand | Toshiba |
Height | 15 mm | Length | 10 mm |
Product Type | MOSFET | Factory Pack Quantity | 50 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Width | 4.5 mm | Unit Weight | 0.068784 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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