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2SK2231

Trans MOSFET N-CH Si 60V 5A 3-Pin(2+Tab) New PW-Mold

Inventory:4,584

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Overview of 2SK2231

HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONSCHOPPER REGULATOR, DC/DC CONVERTER AND MOTOR DRIVE APPLICATIONS● 4 V gate drive● Low drain-source ON-resistance : RDS (ON) = 0.12 Ω (typ.)● High forward transfer admittance : |Yfs| = 5.0 S (typ.)● Low leakage current : IDSS = 100 μA (max) (VDS = 60 V)● Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mAL)

Application

SWITCHING
Toshiba Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid 2SK2231 Rohs Code No
Part Life Cycle Code End Of Life Ihs Manufacturer TOSHIBA CORP
Package Description SMALL OUTLINE, R-PSSO-G2 Reach Compliance Code
ECCN Code EAR99 Date Of Intro 1994-01-01
Samacsys Manufacturer Toshiba Avalanche Energy Rating (Eas) 129 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (Abs) (ID) 5 A
Drain Current-Max (ID) 5 A Drain-source On Resistance-Max 0.16 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PSSO-G2
JESD-609 Code e0 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 20 A Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb) Terminal Form GULL WING
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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