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2SK3561(Q)

Trans MOSFET N-CH Si 500V 8A 3-Pin(3+Tab) TO-220SIS

Inventory:6,170

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220FP-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 8 A Rds On - Drain-Source Resistance 850 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 400 W
Channel Mode Enhancement Series 2SK3561
Brand Toshiba Configuration Single
Fall Time 70 ns Height 15 mm
Length 10 mm Product Type MOSFET
Rise Time 70 ns Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type 1 N-Channel
Width 4.5 mm Unit Weight 0.068784 oz

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