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2SA1313-Y(TE85L,F)

Bipolar Transistors - BJT Bipolar Small-Signal Transistors

Quantity Unit Price(USD) Ext. Price
10 $0.088 $0.88
100 $0.072 $7.20
300 $0.063 $18.90
3000 $0.049 $147.00
6000 $0.044 $264.00
9000 $0.042 $378.00

Inventory:7,954

*The price is for reference only.
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Overview of 2SA1313-Y(TE85L,F)

Bipolar (BJT) Transistor PNP 50 V 500 mA 200MHz 200 mW Surface Mount S-Mini

Application

SWITCHING
TOSHIBA Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid 2SA1313-Y(TE85L,F) Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G3 Reach Compliance Code
ECCN Code EAR99 HTS Code 8541.21.00.75
Samacsys Manufacturer Toshiba Collector Current-Max (IC) 0.5 A
Collector-Emitter Voltage-Max 50 V Configuration SINGLE
DC Current Gain-Min (hFE) 120 JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP Power Dissipation Ambient-Max 0.2 W
Power Dissipation-Max (Abs) 0.2 W Surface Mount YES
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 200 MHz
VCEsat-Max 0.25 V Product Status Active
Transistor Type PNP Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 1V
Power - Max 200 mW Frequency - Transition 200MHz
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package S-Mini
Base Product Number 2SA1313

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