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2SA2056

Bipolar Transistors - BJT

Inventory:4,174

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Overview of 2SA2056

High-Speed Switching ApplicationsDC-DC Converter ApplicationsStrobe Applications• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)• Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)• High-speed switching: tf = 90 ns (typ.)

Application

SWITCHING
TOSHIBA Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid 2SA2056 Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G3 Pin Count 3
Reach Compliance Code ECCN Code EAR99
Samacsys Manufacturer Toshiba Collector Current-Max (IC) 2 A
Collector-Emitter Voltage-Max 50 V Configuration SINGLE
DC Current Gain-Min (hFE) 100 JESD-30 Code R-PDSO-G3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 1 W Qualification Status Not Qualified
Surface Mount YES Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON
Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Package / Case 2-3S1C-3 Transistor Polarity PNP
Collector- Emitter Voltage VCEO Max 50 V Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 200 mV
Maximum DC Collector Current 2 A Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series 2SA
Brand Toshiba DC Collector/Base Gain hfe Min 200
DC Current Gain hFE Max 500 Product Type BJTs - Bipolar Transistors
Subcategory Transistors

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