2N7000P
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Inventory:7,305
- 90-day after-sales guarantee
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Part Number : 2N7000P
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Package/Case : TO-92-3
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Brands : diodes incorporated
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Components Categories : Single FETs, MOSFETs
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Datesheet : 2N7000P DataSheet (PDF)
Overview of 2N7000P
Key Features
- 60 Volt VCEO
- RDS(on) = 5 Ω
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | N |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-92-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 200 mA | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 400 mW | Channel Mode | Enhancement |
Series | 2N7000 | Brand | Diodes Incorporated |
Configuration | Single | Product | MOSFET Small Signal |
Product Type | MOSFET | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Unit Weight | 0.016000 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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