• 2N6661 TO-39-3
2N6661 TO-39-3

2N6661

Trans MOSFET N-CH 90V 0.9A 3-Pin TO-39

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  • Part Number : 2N6661

  • Package/Case : TO-39-3

  • Brands : Microchip

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : 2N6661 DataSheet (PDF)

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Overview of 2N6661

2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

2N6661

Key Features

    • Free from secondary breakdown
    • Low power drive requirement
    • Ease of paralleling
    • Low CISS and fast switching speeds
    • Excellent thermal stability
    • Integral source-drain diode
    • High input impedance and high gain

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-39-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 10 V
Id - Continuous Drain Current 350 mA Rds On - Drain-Source Resistance 4 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 800 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 6.25 W Channel Mode Enhancement
Brand Microchip Technology Configuration Single
Forward Transconductance - Min 170 mS Product Type MOSFET
Factory Pack Quantity 500 Subcategory MOSFETs
Transistor Type 1 N-Channel Type FET
Typical Turn-Off Delay Time 10 ns Typical Turn-On Delay Time 10 ns
Unit Weight 0.039133 oz

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