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UMX5NTR

RF Small Signal Bipolar Transistor with 0.05A I(C)

Quantity Unit Price(USD) Ext. Price
5 $0.094 $0.47
50 $0.078 $3.90
150 $0.069 $10.35
500 $0.063 $31.50
3000 $0.053 $159.00
6000 $0.050 $300.00

Inventory:8,234

*The price is for reference only.
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Overview of UMX5NTR

Bipolar (BJT) Transistor Array 2 NPN (Dual) 11V 50mA 3.2GHz 150mW Surface Mount UMT6

Key Features

  • 1) Two 2SC3838K chips in a EMT or UMT or SMT package.
  • 2) High transition frequency. (fT=3.2GHz)
  • 3) Low output capacitance. (Cob=0.9pF)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Not For New Designs Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 11V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 10mA Current - Collector Cutoff (Max) 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA, 10V Power - Max 150mW
Frequency - Transition 3.2GHz Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package UMT6 Base Product Number UMX5
Manufacturer Bourns Product Category Bipolar Transistors - BJT
Transistor Polarity NPN Configuration Dual
Collector- Emitter Voltage VCEO Max 11 V Collector- Base Voltage VCBO 20 V
Emitter- Base Voltage VEBO 3 V Maximum DC Collector Current 50 mA
Pd - Power Dissipation 150 mW Gain Bandwidth Product fT 3.2 GHz
Maximum Operating Temperature + 150 C Brand Bourns
DC Collector/Base Gain hfe Min 56 at 5 mA, 10 V Product Type BJTs - Bipolar Transistors
Subcategory Transistors Technology Si

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