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UMT2907AT106

UMT2907AT106 Bipolar Junction Transistor PNP 60V 0.6A

Quantity Unit Price(USD) Ext. Price
10 $0.036 $0.36
100 $0.028 $2.80
300 $0.025 $7.50
3000 $0.022 $66.00
6000 $0.020 $120.00
9000 $0.019 $171.00

Inventory:8,490

*The price is for reference only.
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Overview of UMT2907AT106

The UMT2907AT106, provided by Unisonic Technologies, is a versatile NPN bipolar junction transistor (BJT) suitable for both amplification and switching applications in electronic circuits. With a maximum collector current (IC) rating of 600mA and a DC current gain (hFE) of 100-600, it is capable of handling a range of circuit requirements. Its maximum collector-base voltage (VCBO) of 60V and maximum emitter-base voltage (VEBO) of 5V make it suitable for low-power applications, and its low saturation voltage of 0.4V at a collector current of 100mA further enhances its versatility

Key Features

  • 1) BVCEO<-60V (IC=-10mA)
  • 2) Complements the UMT2222A / SST2222A /
  • MMST2222A.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ROHM CO LTD
Part Package Code SC-70 Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer ROHM Semiconductor Collector Current-Max (IC) 0.6 A
Collector-Base Capacitance-Max 7 pF Collector-Emitter Voltage-Max 60 V
Configuration SINGLE DC Current Gain-Min (hFE) 50
JESD-30 Code R-PDSO-G3 JESD-609 Code e1
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN SILVER COPPER Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200 MHz Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 50 ns VCEsat-Max 0.6 V

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