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TC58NVG2S3ETAI0

Small capacity flash memory

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Overview of TC58NVG2S3ETAI0

The TC58NVG2S3ETAI0 is a NAND flash memory IC that offers high-density storage and fast data access. It is designed for use in applications such as consumer electronics, automotive systems, and industrial equipment.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • CE: Chip Enable
  • A0-A19: Address Inputs
  • DQ0-DQ7: Data Inputs/Outputs
  • RY/BY#DQ7: Ready/Busy Output / Data Input/Output
  • CE#: Chip Enable/Output Enable
  • RE#: Read Enable
  • WE#: Write Enable
  • VCC: Positive Power Supply
  • GND: Power Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TC58NVG2S3ETAI0 IC for a visual representation.

Key Features

  • High-Density Storage: The TC58NVG2S3ETAI0 offers large capacity for storing data.
  • Fast Data Access: This NAND flash memory IC provides fast read and write speeds for efficient data transfer.
  • Wide Operating Voltage Range: The TC58NVG2S3ETAI0 operates from a single power supply, compatible with a variety of systems.
  • Reliability: With built-in error correction and wear-leveling algorithms, this IC ensures long-term data integrity and durability.
  • Small Form Factor: The TC58NVG2S3ETAI0 is available in a compact package, saving space in device designs.

Note: For detailed technical specifications, please refer to the TC58NVG2S3ETAI0 datasheet.

Application

  • Consumer Electronics: Suitable for use in smartphones, tablets, cameras, and other consumer electronic devices that require high-capacity storage.
  • Automotive Systems: Used in automotive applications for data storage in infotainment systems, GPS navigation, and driver assistance systems.
  • Industrial Equipment: Ideal for industrial automation, robotics, and IoT devices that need reliable and high-performance storage solutions.

Functionality

The TC58NVG2S3ETAI0 is a NAND flash memory IC that allows for the storage and retrieval of digital data. It offers high-density storage and fast data access, making it suitable for various applications.

Usage Guide

  • Power Supply: Connect VCC (Pin 8) to the positive power supply and GND (Pin 9) to power ground.
  • Address Inputs: Apply the desired address to the A0-A19 pins to access specific memory locations.
  • Data Inputs/Outputs: Use the DQ0-DQ7 pins for data input and output operations.
  • Read/Write Control: Control the read and write operations by applying appropriate signals to the RE# and WE# pins, respectively.

Equivalent

For similar functionalities, consider these alternatives to the TC58NVG2S3ETAI0:

  • Toshiba TC58NVG2S3ETA00: This is a similar NAND flash memory IC from Toshiba, offering comparable performance and features.
  • Samsung K9GBG08U0M: This is a NAND flash memory IC from Samsung, providing similar functionality and compatibility.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category NAND Flash RoHS Details
Mounting Style SMD/SMT Package / Case TSOP-48
Memory Size 4 Gbit Interface Type Parallel
Organization 512 M x 8 Timing Type Synchronous
Data Bus Width 8 bit Supply Voltage - Min 2.7 V
Supply Voltage - Max 3.6 V Supply Current - Max 30 mA
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 85 C
Active Read Current - Max 30 mA Architecture Block Erase
Brand Kioxia America Memory Type NAND
Moisture Sensitive Yes Product NAND Flash
Product Type NAND Flash Speed 25 ns
Factory Pack Quantity 96 Subcategory Memory & Data Storage

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