TC58BVG0S3HTAI0
48-Pin TSOP-I package
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $2.517 | $2.52 |
| 192 | $1.004 | $192.77 |
| 480 | $0.972 | $466.56 |
| 960 | $0.955 | $916.80 |
Inventory:7,553
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : TC58BVG0S3HTAI0
-
Package/Case : TSOP48
-
Brand : KIOXIA
-
Components Classification : Memory
-
Datesheet : TC58BVG0S3HTAI0 DataSheet (PDF)
-
Series : BENAND™
Overview of TC58BVG0S3HTAI0
FLASH - NAND (SLC) Memory IC 1Gbit Parallel 25 ns 48-TSOP I
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category | NAND Flash | RoHS | Details |
| Mounting Style | SMD/SMT | Package / Case | TSOP-48 |
| Memory Size | 1 Gbit | Interface Type | Parallel |
| Organization | 128 M x 8 | Timing Type | Synchronous |
| Data Bus Width | 8 bit | Supply Voltage - Min | 2.7 V |
| Supply Voltage - Max | 3.6 V | Supply Current - Max | 30 mA |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 85 C |
| Brand | Kioxia America | Memory Type | NAND |
| Moisture Sensitive | Yes | Product Type | NAND Flash |
| Factory Pack Quantity | 96 | Subcategory | Memory & Data Storage |
| Unit Weight | 0.018695 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
TC58NVG1S3ETA00
2Gb NAND chip designed for reliable data storage and quick data transfer
TC55NEM216ATGN70
Toshiba SRAM, TC55NEM216ATGN70
TC58NVG1S3EBAI4
3V Programmable ROM IC EEPROM
TC58DVM92A5TA00
64M X 8 EEPROM IC in 3V, 40 ns
TC58NVG0S3ETA00
NAND Flash memory chip with 1Gb capacity, operating at 3.3V voltage level and utilizing Single-Level Cell (SLC) technology on a 43nm process node
TC58NVG1S3EBAI5
Suitable for industrial applications requiring reliable performance and durability
TC58NYG1S3EBAI5
Small flash memory chip
TC58NVG0S3HTA00
TSOPI-48 RoHS EEPROM
TC58NVG2S0HBAI4
NAND Flash Parallel 3.3V 4G-bit 512M x 8 63-Pin TFBGA
SDIN7DU2-32G
High-Speed Memory Drive with Ultra-Thin Profile
24LC64-I/P
64K I2C SERIAL EEPROM
MX29LV040CQI-70G
512K x 8 bit 4Mbit
IS61WV10248BLL-10TLI
SRAM Chip Async Dual 2.5V/3.3V 8M-bit 1M x 8 10ns 44-Pin TSOP-II
IS42S16800D-7TL
Operating speed of 143 megahertz
MT29F4G08ABBDAHC-IT:D
Microchip Technology SLC Flash Memory, 4G capacity, 512Mx8 configuration, in FBGA package
MT47H64M16NF-25E XIT:M
84-Pin FBGA Tray
AT49BV322A-70TI
NOR Flash 32Mb (2Mx16)
FM25CL64-S
8Kx8 memory chip
XC18V04VQ44I
XC18V04VQ44I is a PROM chip with a capacity of 4M-bits, designed for parallel and serial communication at a voltage of 3