• packageimg
packageimg

SUM90N10-8M2P-E3

90 amp, 100 volt MOSFET designed to handle up to 300 watts of power dissipation

Quantity Unit Price(USD) Ext. Price
1 $2.271 $2.27
10 $2.151 $21.51
30 $2.078 $62.34
100 $2.005 $200.50
500 $1.971 $985.50
800 $1.956 $1,564.80

Inventory:5,754

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for SUM90N10-8M2P-E3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SUM90N10-8M2P-E3

The SUM90N10-8M2P-E3 from Vishay is a cutting-edge N-Channel MOSFET tailored for high-power applications. With a voltage rating of 100V and a continuous drain current of 90A, this MOSFET is capable of handling heavy-duty tasks with precision and efficiency. Its ultra-low RDS(ON) of 8 mΩ at VGS = 10V ensures minimal power loss and maximum performance in power supplies, motor control systems, and other critical applications. The gate charge of 72nC typical at VGS = 10V enables swift and accurate switching operations, making it ideal for synchronous rectification and similar functions. Furthermore, the SUM90N10-8M2P-E3 is RoHS compliant, confirming its adherence to environmental standards. In essence, this MOSFET is a powerhouse component that excels in providing reliable and effective solutions for various power electronics requirements

Key Features

  • 100% Rg tested
  • 100% UIS tested
  • -55 to 175°C Operating temperature range

Application

  • Industrial
  • Power Management

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series TrenchFET® Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6290 pF @ 50 V
Power Dissipation (Max) 3.75W (Ta), 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Base Product Number SUM90

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

SIR664DP-T1-GE3

SIR664DP-T1-GE3

8-Pin MOSFET in Tape and Reel packaging
SI4925DY

SI4925DY

A 30-volt MOSFET with a maximum current rating of 6.1 amps and a power dissipation of 2 watts."
STA481A

STA481A

ROHS-compliant Darlington Transistor Arrays packaged in SIP-10
PHE13005

PHE13005

voltage NPN bipolar transistor
IXFN90N85X

IXFN90N85X

Operating with a gate-source voltage of 10V and low leakage current of 5.5V at 8mA
DMP4015SSS-13

DMP4015SSS-13

40 V 15 mOhm Power Transistor
APT20M11JVFR

APT20M11JVFR

200V N-type MOSFET with 175A Current Rating
CM300DU-12NFH

CM300DU-12NFH

Product code: CM300DU-12NFH
SI7121DN-T1-GE3

SI7121DN-T1-GE3

16 Amp 30 Volt P-Channel Power MOSFET in an 8-Pin PowerPAK 1212 EP package on reel
IRFY9140

IRFY9140

Trans MOSFET P-CH 100V 15.8A 3-Pin(3+Tab) TO-257AA