SUM70030E-GE3
MOSFET 100V Vds; 20V Vgs TO-263
Inventory:7,675
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Part Number : SUM70030E-GE3
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Package/Case : TO-263-3
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Brand : Vishay Siliconix
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Components Classification : Single FETs, MOSFETs
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Datesheet : SUM70030E-GE3 DataSheet (PDF)
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Series : SUM70030E
Overview of SUM70030E-GE3
The SUM70030E-GE3 is a high-performance N Channel MOSFET transistor designed for applications that require high power and efficiency. With a continuous drain current rating of 150A and a drain source voltage rating of 100V, this MOSFET is capable of handling high power loads with ease. Its low on-resistance of 0.0024ohm and low threshold voltage of 4V make it ideal for use in power electronics and automotive applications
Key Features
- Pulse-width modulated for efficiency
- Low inductive switching
- Fully isolated gate driver
- Overvoltage protection for safe operation
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | TrenchFET® | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V | Rds On (Max) @ Id, Vgs | 2.88mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 214 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 10870 pF @ 50 V |
Power Dissipation (Max) | 375W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | TO-263 (D2PAK) |
Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Base Product Number | SUM70030 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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