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STW60NM50N

High-performance N-channel MOSFET employing MDmesh II FET technology, engineered for applications requiring a 500V voltage rating, 0

Inventory:7,497

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Overview of STW60NM50N

Housed in a reliable TO-247 package, the STW60NM50N offers excellent thermal properties that contribute to its durability and longevity. With a maximum operating temperature of 175°C, this MOSFET is built to withstand challenging environments with ease, ensuring consistent performance under extreme conditions

Key Features

  • High efficiency power conversion
  • Fast switching time performance
  • Laser trimmed for precise control

Application

  • Powerful motor control
  • Efficient lighting option
  • Industrial power supply

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-247-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 43 A Rds On - Drain-Source Resistance 43 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 178 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 446 W
Channel Mode Enhancement Tradename MDmesh
Series STW60NM50N Brand STMicroelectronics
Configuration Single Fall Time 27.5 ns
Product Type MOSFET Rise Time 36 ns
Factory Pack Quantity 600 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 40 ns
Typical Turn-On Delay Time 206 ns Unit Weight 0.211644 oz

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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