STP6NK90ZFP
N-Channel MOSFET with 900V and 1.56ohms Zener SuperMESH technology, rated for 5.8A
Inventory:8,173
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Part Number : STP6NK90ZFP
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Package/Case : TO-220FP
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Brand : Stmicroelectronics
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Components Classification : Single FETs, MOSFETs
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Datesheet : STP6NK90ZFP DataSheet (PDF)
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Series : STP6NK90ZFP
The STP6NK90ZFP is an N-channel power MOSFET designed for high-power switching applications. This MOSFET features a breakdown voltage of 900V and a continuous drain current of 6A, making it suitable for use in various power electronic circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the STP6NK90ZFP MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the STP6NK90ZFP datasheet. Functionality The STP6NK90ZFP MOSFET is designed to control high-power loads with efficiency and reliability. Its high breakdown voltage and current-handling capabilities make it a versatile component for power electronics applications. Usage Guide Q: What is the maximum breakdown voltage of the STP6NK90ZFP? Q: Can the STP6NK90ZFP be used for high-frequency switching applications? For similar functionalities, consider these alternatives to the STP6NK90ZFP:Overview of STP6NK90ZFP
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The STP6NK90ZFP has a maximum breakdown voltage of 900V, allowing it to withstand high voltage levels.
A: Yes, the STP6NK90ZFP features fast switching speeds, making it suitable for high-frequency switching applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Operating Temp Min Celsius | -55.0 | Operating Temp Max Celsius | 150.0 |
ECCN US | EAR99 | ECCN EU | NEC |
Packing Type | Tube | RoHs compliant | Ecopack2 |
Grade | Industrial | Package Name | TO-220FP |
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Warranty, Returns, and Additional Information
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