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STP6NK90ZFP

N-Channel MOSFET with 900V and 1.56ohms Zener SuperMESH technology, rated for 5.8A

Inventory:8,173

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Overview of STP6NK90ZFP

The STP6NK90ZFP is an N-channel power MOSFET designed for high-power switching applications. This MOSFET features a breakdown voltage of 900V and a continuous drain current of 6A, making it suitable for use in various power electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • B: Body (Substrate)

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the STP6NK90ZFP MOSFET for a visual representation.

Key Features

  • High Breakdown Voltage: The STP6NK90ZFP offers a high breakdown voltage of 900V, ensuring reliable operation in high-voltage circuits.
  • Low On-Resistance: With a low on-resistance, this MOSFET minimizes power losses and improves efficiency in switching applications.
  • High Drain Current: The 6A continuous drain current capability allows the MOSFET to handle high currents without overheating.
  • Enhanced Power Dissipation: The STP6NK90ZFP is designed for enhanced power dissipation, enabling it to dissipate heat effectively during operation.
  • Fast Switching Speed: This MOSFET features fast switching speeds, making it suitable for high-frequency switching applications.

Note: For detailed technical specifications, please refer to the STP6NK90ZFP datasheet.

Application

  • Switch Mode Power Supplies: Ideal for use in switch mode power supply circuits for efficient power delivery.
  • Motor Control: Suitable for motor control applications where high-power switching is required.
  • Inverters: Used in inverter circuits to convert DC power to AC power in various applications.

Functionality

The STP6NK90ZFP MOSFET is designed to control high-power loads with efficiency and reliability. Its high breakdown voltage and current-handling capabilities make it a versatile component for power electronics applications.

Usage Guide

  • Gate Control: Apply appropriate gate voltage levels to control the switching of the MOSFET.
  • Heat Management: Ensure proper heat sinking to maintain the MOSFET within its operating temperature range.
  • Load Connection: Connect the load to the drain terminal while ensuring proper current handling capability.

Frequently Asked Questions

Q: What is the maximum breakdown voltage of the STP6NK90ZFP?
A: The STP6NK90ZFP has a maximum breakdown voltage of 900V, allowing it to withstand high voltage levels.

Q: Can the STP6NK90ZFP be used for high-frequency switching applications?
A: Yes, the STP6NK90ZFP features fast switching speeds, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the STP6NK90ZFP:

  • IRF840: An N-channel power MOSFET with comparable specifications suitable for high-power switching applications.
  • FQP30N06L: This MOSFET offers similar performance characteristics to the STP6NK90ZFP and can be used as an alternative in power electronics designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Operating Temp Min Celsius -55.0 Operating Temp Max Celsius 150.0
ECCN US EAR99 ECCN EU NEC
Packing Type Tube RoHs compliant Ecopack2
Grade Industrial Package Name TO-220FP

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