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STP5NK60ZFP

MOSFET N-Ch, 650V-1.2ohms Zener SuperMESH 5A

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Overview of STP5NK60ZFP

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Key Features

  • BUILT FOR EXTREME TEMPERATURE OPERATIONS
  • ULTRA FAST SWITCHING TIMES AND HIGH FREQUENCY OPERATION
  • HIGH CURRENT CAPABILITIES WITH MINIMAL HEAT GENERATION

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STP5NK60ZFP Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics Avalanche Energy Rating (Eas) 220 mJ
Case Connection ISOLATED Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V Drain Current-Max (Abs) (ID) 5 A
Drain Current-Max (ID) 5 A Drain-source On Resistance-Max 1.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON Manufacturer STMicroelectronics
Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 5 A Rds On - Drain-Source Resistance 1.6 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 34 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 25 W
Channel Mode Enhancement Tradename SuperMESH
Series STP5NK60ZFP Brand STMicroelectronics
Fall Time 25 ns Height 9.3 mm
Length 10.4 mm Product Type MOSFET
Rise Time 25 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 36 ns Typical Turn-On Delay Time 16 ns
Width 4.6 mm Unit Weight 0.068784 oz

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