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STGYA120M65DF2

Trans IGBT Chip N-CH 650V 160A 625W 3-Pin(3+Tab) Max247 Tube

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Overview of STGYA120M65DF2

The STGYA120M65DF2 is a cutting-edge IGBT designed with a proprietary trench gate field-stop structure, offering exceptional performance and efficiency in inverter systems. Belonging to the M series IGBTs, this device strikes a perfect balance between low-loss operation and necessary short-circuit functionality. Its positive VCE(sat) temperature coefficient and precise parameter distribution ensure safe operation when used in parallel setups, making it a reliable choice for various industrial applications

Key Features

  • Maximum junction temperature: TJ = 175 °C
  • 6 μs of minimum short-circuit withstand time
  • VCE(sat) = 1.65 V (typ.) @ IC = 120 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft- and fast-recovery antiparallel diode

Application

POWER CONTROL

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STGYA120M65DF2 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Manufacturer Package Code MAX247 LONG LEADS
Reach Compliance Code compliant Samacsys Manufacturer STMicroelectronics

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