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BC817DS,115

Product BC817DS

Quantity Unit Price(USD) Ext. Price
5 $0.092 $0.46
50 $0.075 $3.75
150 $0.066 $9.90
500 $0.059 $29.50
3000 $0.053 $159.00
6000 $0.052 $312.00

Inventory:8,403

*The price is for reference only.
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Overview of BC817DS,115

The BC817DS,115 is a general-purpose NPN bipolar junction transistor (BJT) designed for various low to medium power applications. This transistor features a high current gain and low saturation voltage, making it suitable for amplification and switching tasks in electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector
  • S: Substrate or Case

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BC817DS,115 transistor for better understanding.

Key Features

  • General-Purpose NPN BJT: The BC817DS,115 is a versatile NPN transistor suitable for a wide range of applications.
  • High Current Gain: Offers high current amplification capability, making it suitable for amplification purposes.
  • Low Saturation Voltage: Features a low saturation voltage, enhancing efficiency in switching applications.
  • Small Signal Transistor: Ideal for small signal amplification and switching tasks in electronic circuits.
  • Compact Package: Available in a small SOT-23 surface-mount package for space-constrained designs.

Note: For detailed technical specifications, please refer to the BC817DS,115 datasheet.

Application

  • Amplification: Suitable for signal amplification in audio and sensor circuits.
  • Switching: Can be used for switching applications in logic circuits and relay driving.
  • Oscillator Circuits: Employed in oscillator circuits for generating clock signals and waveforms.

Functionality

The BC817DS,115 NPN transistor serves as a versatile component for amplifying and switching electronic signals in various circuits. It provides reliable performance and ease of integration in different applications.

Usage Guide

  • Connection: Connect the Collector (C), Base (B), and Emitter (E) pins to the respective circuit elements as per the design requirements.
  • Biasing: Ensure appropriate biasing of the Base-Emitter junction for proper transistor operation.
  • Load Connection: Connect the load to the Collector terminal for amplification or switching tasks.

Frequently Asked Questions

Q: Can the BC817DS,115 be used in high-frequency applications?
A: While primarily suited for low to medium frequency operations, the BC817DS,115 can be used cautiously in high-frequency circuits with proper considerations.

Equivalent

For similar functionalities, consider these alternatives to the BC817DS,115:

  • BC847DS,115: A complementary PNP transistor with similar characteristics to the BC817DS,115.
  • 2N3904: A widely used NPN transistor with comparable specifications to the BC817DS,115.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Type number BC817DS Package version SOT457
Package name TSOP6 Size (mm) 2.9 x 1.5 x 1
Polarity NPN Configuration 2
Ptot (mW) 370 VCEO [max] (V) 45
IC [max] (mA) 500 hFE [min] 160
hFE [max] 400 fr [min] (MHz) 100
Packing SOT457_115 Orderable part number BC817DS,115
Chemical content BC817DS

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