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STGWA50IH65DF

Trans IGBT Chip N-CH 650V 100A 300W 3-Pin(3+Tab) TO-247 Tube

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Overview of STGWA50IH65DF

Elevate your applications with the STGWA50IH65DF, a top-of-the-line IGBT featuring advanced technology for enhanced performance. With a proprietary trench gate field-stop structure, this product offers optimized conduction and switching losses for seamless soft commutation. The inclusion of a low drop forward voltage freewheeling diode further maximizes efficiency, making it the ideal choice for any resonant and soft-switching applications

Key Features

  • Designed for soft-commutation only
  • Maximum junction temperature: TJ = 175 °C
  • VCE(sat) = 1.5 V (typ.) @ IC = 50 A
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Low voltage drop freewheeling co-packaged diode
  • Positive VCE(sat) temperature coefficient

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STGWA50IH65DF Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer STMicroelectronics
Case Connection COLLECTOR Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 650 V Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247 JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 300 W
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON Turn-off Time-Nom (toff) 294 ns
VCEsat-Max 2 V

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