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IRF644NS

IRF644NS is a N-channel MOSFET designed for applications requiring up to 250 volts and 14 amps

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Overview of IRF644NS

The IRF644NS is an N-channel power MOSFET designed for high efficiency and high power switching applications. It features a low on-state resistance and high switching speed, making it suitable for use in power supplies, motor control, and other high-current switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Control terminal for turning the MOSFET on and off.
  • Drain (D): Connection for the power supply or load.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF644NS MOSFET for a visual representation.

Key Features

  • High Efficiency: The IRF644NS offers low on-state resistance and high switching speed, resulting in improved efficiency in power conversion applications.
  • High Power Handling: With its N-channel design, this MOSFET can handle high power levels, making it suitable for high-current applications.
  • Fast Switching: The high switching speed of the IRF644NS allows for rapid on/off transitions, reducing switching losses.

Note: For detailed technical specifications, please refer to the IRF644NS datasheet.

Application

  • Power Supplies: Ideal for use in high-efficiency power supply circuits, where low on-state resistance is essential.
  • Motor Control: Suitable for controlling high-power DC motors and other motor control applications.
  • Switching Circuits: Used in high-power switching applications such as relays, solenoids, and inverters.

Functionality

The IRF644NS is designed to efficiently switch high power loads with its low on-state resistance and high switching speed, making it a reliable choice for power electronics applications.

Usage Guide

  • Gate Control: Apply the appropriate gate voltage to turn the MOSFET on and off, controlling the power flow between the drain and source terminals.
  • Heat Management: Ensure proper heat sinking to dissipate the heat generated during high-power operation.
  • Load Connection: Connect the load or power supply to the drain terminal and the ground to the source terminal.

Frequently Asked Questions

Q: Is the IRF644NS suitable for high-frequency switching applications?
A: Yes, the high switching speed of the IRF644NS makes it suitable for high-frequency switching applications in power electronics.

Equivalent

For similar functionalities, consider these alternatives to the IRF644NS:

  • IRF640NS: An N-channel power MOSFET with similar performance characteristics to the IRF644NS, suitable for high-power switching applications.
  • IRF740: This MOSFET offers comparable power handling capabilities and can be used as an alternative to the IRF644NS in certain applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS N
Technology Si Mounting Style SMD/SMT
Package / Case TO-263-3 Series IRF
Brand Vishay / Siliconix Height 4.83 mm
Length 10.67 mm Product Type MOSFET
Factory Pack Quantity 50 Subcategory MOSFETs
Width 9.65 mm Unit Weight 0.139332 oz

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