STGW30H60DFB
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-247 Tube
Inventory:4,548
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Part Number : STGW30H60DFB
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Package/Case : TO-247
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Brand : ST
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Components Classification : Single IGBTs
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Datesheet : STGW30H60DFB DataSheet (PDF)
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Series : STGW30H60DFB
Overview of STGW30H60DFB
Meet the STGW30H60DFB, a high-performance IGBT designed for demanding applications. With a continuous collector current of 60A and a collector emitter saturation voltage of 1.55V, this device can handle power dissipation of up to 260W. The TO-247 package features 3 pins for easy installation, and the device can operate at a maximum temperature of 175°C. RoHS compliance ensures that this IGBT meets environmental standards while delivering exceptional performance. Choose the STGW30H60DFB from Stmicroelectronics for your next project
Key Features
- Reliable operation and fault tolerance
- Precise control of voltage and current
- Fast response to input changes
- Compact and lightweight package
Application
POWER CONTROLSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | STGW30H60DFB | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Package Description | , |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
Case Connection | COLLECTOR | Collector Current-Max (IC) | 60 A |
Collector-Emitter Voltage-Max | 600 V | Configuration | SINGLE WITH BUILT-IN DIODE |
Gate-Emitter Thr Voltage-Max | 7 V | Gate-Emitter Voltage-Max | 20 V |
JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Temperature-Max | 175 °C | Operating Temperature-Min | -55 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 260 W |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | POWER CONTROL | Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 223 ns | Turn-on Time-Nom (ton) | 51.1 ns |
VCEsat-Max | 2 V |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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