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STGW25M120DF3

Trans IGBT Chip N-CH 1200V 50A 375W 3-Pin(3+Tab) TO-247 Tube

Inventory:5,821

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Submit your quote request for STGW25M120DF3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of STGW25M120DF3

Featuring a state-of-the-art trench gate field-stop structure, the STGW25M120DF3 IGBT represents a significant leap forward in power semiconductor technology. As a part of the M series, this device offers a perfect blend of inverter system performance and energy efficiency, particularly in environments where achieving low losses and protection against short circuits are crucial considerations. Its positive VCE(sat)temperature coefficient and consistent parameter distribution ensure secure parallel operation, making it a reliable choice for applications that demand both reliability and performance

Key Features

  • Robust package design
  • Excellent thermal conductivity
  • Operating temperature range -40°C to 125°C

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STGW25M120DF3 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer STMicroelectronics
Collector Current-Max (IC) 50 A Collector-Emitter Voltage-Max 1200 V
Gate-Emitter Thr Voltage-Max 7 V Gate-Emitter Voltage-Max 20 V
Operating Temperature-Max 175 °C Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 375 W
Surface Mount NO Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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