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STGP20H60DF

Trans IGBT Chip N-CH 600V 40A 100W 3-Pin(3+Tab) TO-220AB Tube

Inventory:7,958

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Overview of STGP20H60DF

Unleashing groundbreaking advancements, the STGP20H60DF epitomizes excellence in IGBT technology with its cutting-edge trench gate and field stop construction. By meticulously balancing conduction and switching losses, this series sets a new standard in efficiency for very high frequency converters. Its advantageous VCE(sat) temperature coefficient and stringent parameter consistency pave the way for simplified parallel operation, offering users a seamless and reliable experience in their applications

Key Features

  • Pulse energy storage
  • Excellent thermal stability
  • Very low capacitance loss
  • Robust mechanical construction

Application

POWER CONTROL

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STGP20H60DF Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer STMicroelectronics Case Connection COLLECTOR
Collector Current-Max (IC) 40 A Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 167 W Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 259 ns
Turn-on Time-Nom (ton) 55.9 ns VCEsat-Max 2 V

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