MMBT3906T-7-F
Bipolar Junction Transistor General Purpose PNP 40V 0.2A SOT-523 Package
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
10 | $0.031 | $0.31 |
100 | $0.026 | $2.60 |
300 | $0.024 | $7.20 |
3000 | $0.023 | $69.00 |
6000 | $0.022 | $132.00 |
9000 | $0.021 | $189.00 |
Inventory:8,321
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Part Number : MMBT3906T-7-F
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Package/Case : SOT523-3
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Brand : DIODES
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Components Classification : Single Bipolar Transistors
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Datesheet : MMBT3906T-7-F DataSheet (PDF)
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Series : MMBT39
The MMBT3906T-7-F is a PNP Bipolar Transistor in a SOT-23 package, designed for general-purpose amplification and switching applications. This transistor offers high current gain and low saturation voltage, making it suitable for various electronic circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the MMBT3906T-7-F transistor for a visual representation. Note: For detailed technical specifications, please refer to the MMBT3906T-7-F datasheet. Functionality The MMBT3906T-7-F PNP Bipolar Transistor is used to amplify or switch electronic signals. Its high current gain and low saturation voltage make it a versatile component in various electronic designs. Usage Guide Q: What is the maximum current rating of the MMBT3906T-7-F transistor? Q: Is the MMBT3906T-7-F suitable for high-frequency applications? For similar functionalities, consider these alternatives to the MMBT3906T-7-F:Overview of MMBT3906T-7-F
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The MMBT3906T-7-F has a maximum continuous collector current rating of 200mA.
A: While the MMBT3906T-7-F can be used in moderate-frequency applications, for high-frequency designs, consider transistors specifically designed for RF applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | SMD/SMT | Package / Case | SOT-523-3 |
Transistor Polarity | PNP | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 40 V | Collector- Base Voltage VCBO | 40 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 400 mV |
Maximum DC Collector Current | 200 mA | Pd - Power Dissipation | 150 mW |
Gain Bandwidth Product fT | 140 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | MMBT39 |
Brand | Diodes Incorporated | Continuous Collector Current | - 200 mA |
DC Current Gain hFE Max | 300 | Height | 0.75 mm |
Length | 1.6 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | Subcategory | Transistors |
Technology | Si | Width | 0.8 mm |
Unit Weight | 0.000071 oz |
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