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MMBT3906T-7-F

Bipolar Junction Transistor General Purpose PNP 40V 0.2A SOT-523 Package

Quantity Unit Price(USD) Ext. Price
10 $0.031 $0.31
100 $0.026 $2.60
300 $0.024 $7.20
3000 $0.023 $69.00
6000 $0.022 $132.00
9000 $0.021 $189.00

Inventory:8,321

*The price is for reference only.
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Overview of MMBT3906T-7-F

The MMBT3906T-7-F is a PNP Bipolar Transistor in a SOT-23 package, designed for general-purpose amplification and switching applications. This transistor offers high current gain and low saturation voltage, making it suitable for various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Current flows out through the emitter terminal.
  • Base (B): The base terminal controls the current flow between the emitter and collector.
  • Collector (C): Current flows into the collector terminal.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MMBT3906T-7-F transistor for a visual representation.

Key Features

  • PNP Bipolar Transistor: The MMBT3906T-7-F is a PNP transistor suitable for amplification and switching purposes.
  • High Current Gain: This transistor offers high current gain, enabling efficient signal amplification.
  • Low Saturation Voltage: With a low saturation voltage, the MMBT3906T-7-F ensures minimal power loss during switching.
  • SOT-23 Package: Housed in a SOT-23 surface-mount package, this transistor is compact and suitable for space-constrained applications.
  • Wide Operating Temperature Range: The MMBT3906T-7-F can operate in a wide temperature range, making it versatile for various environments.

Note: For detailed technical specifications, please refer to the MMBT3906T-7-F datasheet.

Application

  • Signal Amplification: Ideal for amplifying weak signals in audio, RF, and sensor circuits.
  • Switching Circuits: Suitable for use in digital and analog switching applications.
  • Voltage Regulation: Can be used in voltage regulation circuits and current mirrors.

Functionality

The MMBT3906T-7-F PNP Bipolar Transistor is used to amplify or switch electronic signals. Its high current gain and low saturation voltage make it a versatile component in various electronic designs.

Usage Guide

  • Emitter Connection: Connect the emitter terminal (E) to the ground or the output terminal, depending on the circuit configuration.
  • Base Connection: Apply the input signal or control voltage to the base terminal (B) to control the transistor's conductivity.
  • Collector Connection: Connect the collector terminal (C) to the load or the desired output.

Frequently Asked Questions

Q: What is the maximum current rating of the MMBT3906T-7-F transistor?
A: The MMBT3906T-7-F has a maximum continuous collector current rating of 200mA.

Q: Is the MMBT3906T-7-F suitable for high-frequency applications?
A: While the MMBT3906T-7-F can be used in moderate-frequency applications, for high-frequency designs, consider transistors specifically designed for RF applications.

Equivalent

For similar functionalities, consider these alternatives to the MMBT3906T-7-F:

  • 2N3906: A general-purpose PNP transistor suitable for amplification and switching tasks.
  • BC557: This PNP transistor offers similar characteristics to the MMBT3906T-7-F and is commonly used in low-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case SOT-523-3
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 400 mV
Maximum DC Collector Current 200 mA Pd - Power Dissipation 150 mW
Gain Bandwidth Product fT 140 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series MMBT39
Brand Diodes Incorporated Continuous Collector Current - 200 mA
DC Current Gain hFE Max 300 Height 0.75 mm
Length 1.6 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 0.8 mm
Unit Weight 0.000071 oz

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