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STF35N60DM2

Trans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220FP Tube

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Overview of STF35N60DM2

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Key Features

  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF35N60DM2 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer STMicroelectronics Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Manufacturer STMicroelectronics
Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 28 A Rds On - Drain-Source Resistance 110 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 54 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 40 W
Channel Mode Enhancement Tradename MDmesh
Series STF35N60DM2 Brand STMicroelectronics
Configuration Single Fall Time 10.7 ns
Product Type MOSFET Rise Time 17 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Typical Turn-Off Delay Time 68 ns Typical Turn-On Delay Time 21.2 ns
Unit Weight 0.068784 oz

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