• packageimg
packageimg

STF21NM60ND

STMicroelectronics STF21NM60ND N-channel MOSFET Transistor, 17 A, 600 V, 3-Pin TO-220FP

Inventory:7,702

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for STF21NM60ND using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of STF21NM60ND

MOSFET, N CH, 600V, 17A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow

Key Features

  • Worldwide best RDS (ON) area amongst the fast recovery diode devices
  • 100% Avalanche tested
  • Low gate input resistance
  • Extremely high dV/dt and avalanche capabilities

Application

  • Industrial
  • Power Management

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF21NM60ND Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB Package Description ROHS COMPLIANT, TO-220FP, 3 PIN
Pin Count 3 Reach Compliance Code not_compliant
ECCN Code EAR99 Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 610 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 17 A Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.22 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 30 W
Pulsed Drain Current-Max (IDM) 68 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

IRFP3710PBF

IRFP3710PBF

Transistor MOSFET N-channel with 100V voltage rating and 57A current capacity in a TO-247AC package
IRGB5B120KD

IRGB5B120KD

2A collector current and 1200V breakdown voltage insulated gate bipolar transistor in TO-220AB package
IRF7492

IRF7492

Surface Mount 8-SO IRF7492
2N3507

2N3507

2N3507 Product Overview: Power Bipolar Transistor - BJT
IRG4IBC30W

IRG4IBC30W

IRG4IBC30W: A cutting-edge Trans IGBT Chip optimized for power electronics
BCW68HTA

BCW68HTA

BCW68HTA is a medium power transistor with a voltage rating of 45V, capable of handling currents up to 0
BSC220N20NSFDATMA1

BSC220N20NSFDATMA1

This MOSFET has a low on-state resistance of 22mΩ at 52A and can handle a power dissipation of 214W at 10V
IRG4BC20KDPBF

IRG4BC20KDPBF

N-channel IGBT Semiconductor Chip, 600V, 16A, 60,000mW, TO-220AB Package
IRFS7530-7PPBF

IRFS7530-7PPBF

N-channel Silicon Transistor with 338A Current Capability and 60V Voltage Rating
TIM0910-2

TIM0910-2

Hermetically sealed, reliable RF power transistor solutio