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STF16N65M2

Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220FP Tube

Quantity Unit Price(USD) Ext. Price
1 $1.225 $1.22
10 $1.057 $10.57
50 $0.964 $48.20
100 $0.860 $86.00
500 $0.813 $406.50
1000 $0.793 $793.00

Inventory:5,731

*The price is for reference only.
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Overview of STF16N65M2

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Ultra-fast switching speed
  • Low input capacitance
  • High current handling capacity
  • Zener-protected
  • Ruggedized against voltage surges

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF16N65M2 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Package Description TO-220FP, 3 PIN
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 360 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 11 A Drain-source On Resistance-Max 0.36 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 44 A
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON

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