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NTHD3101FT1G

0V power circuits

Inventory:7,693

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Overview of NTHD3101FT1G

The NTHD3101FT1G is a high-speed, high-voltage N-channel Power MOSFET specifically designed for use in power management and load switching applications. It features a low on-resistance and fast switching performance, making it suitable for various power control and conversion tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate terminal for MOSFET control
  • DRAIN: High-voltage power terminal
  • SOURCE: Ground terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NTHD3101FT1G MOSFET for a visual representation.

Key Features

  • High-Speed Switching: The NTHD3101FT1G offers fast switching capabilities, enabling rapid power control in electronic circuits.
  • High Voltage Capability: With a high voltage rating, this MOSFET is suitable for applications requiring high-power handling.
  • Low On-Resistance: The low on-resistance minimizes power loss and heat generation during operation, enhancing overall efficiency.
  • ESD Protection: Includes built-in electrostatic discharge (ESD) protection for improved reliability in harsh operating conditions.
  • Compact Package: Available in a compact and thermally efficient package for space-constrained designs.

Note: For detailed technical specifications, please refer to the NTHD3101FT1G datasheet.

Application

  • Power Management: Ideal for power management and load switching applications in various electronic systems.
  • DC-DC Conversion: Suitable for use in DC-DC converter circuits for efficient power conversion.
  • Motor Control: Can be used for motor control applications requiring high-speed switching and high voltage handling.

Functionality

The NTHD3101FT1G is a high-speed, high-voltage N-channel Power MOSFET designed to provide efficient power control and switching capabilities in electronic circuits. It offers superior performance for power management and conversion tasks.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the switching behavior of the MOSFET.
  • Load Connection: Connect the load to the DRAIN terminal for power switching operations.
  • Ground Connection: Connect the SOURCE terminal to the ground reference of the system.

Frequently Asked Questions

Q: Is the NTHD3101FT1G suitable for high-frequency switching applications?
A: Yes, the NTHD3101FT1G is designed for high-speed switching, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the NTHD3101FT1G:

  • NTJD4105C: This is a comparable N-channel Power MOSFET designed for high-speed switching and high-voltage applications.
  • NTD5867NL: Another N-channel Power MOSFET with similar characteristics, suitable for power management and load switching.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Last Shipments Compliance PbAHP
Package Type ChipFET-8 Case Outline 1206A-03
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Channel Polarity P-Channel
Configuration with Schottky Diode V(BR)DSS Min (V) -20
VGS Max (V) 8 VGS(th) Max (V) 1.5
ID Max (A) 3.2 PD Max (W) 1.1
RDS(on) Max @ VGS = 2.5 V (mΩ) 85 RDS(on) Max @ VGS = 4.5 V (mΩ) 64
Qg Typ @ VGS = 4.5 V (nC) 8.6 Qg Typ @ VGS = 10 V (nC) 7.4
Ciss Typ (pF) 680 Pricing ($/Unit) Price N/A

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