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STF15NM65N

MOSFET N-Channel 650V Pwr Mosfet

Quantity Unit Price(USD) Ext. Price
1 $1.404 $1.40
10 $1.263 $12.63
30 $1.173 $35.19
100 $1.083 $108.30
500 $1.041 $520.50
1000 $1.025 $1,025.00

Inventory:8,156

*The price is for reference only.
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Overview of STF15NM65N

Designed for demanding power applications, the STF15NM65N Power Field-Effect Transistor provides a high voltage rating of 650V and a low on-resistance of 0.35 ohms typ. The N-Channel design and TO-220AB package make it easy to integrate into a variety of power electronics projects, offering reliable and efficient performance. Whether used in motor controls, power supplies, or voltage regulators, this MOSFET delivers the power and durability needed for critical applications

Key Features

  • Robustness against overvoltage and noise
  • Fast switching speed and high current handling

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF15NM65N Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 187 mJ
Case Connection ISOLATED Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V Drain Current-Max (Abs) (ID) 15.5 A
Drain Current-Max (ID) 12 A Drain-source On Resistance-Max 0.38 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 35 W Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON Manufacturer STMicroelectronics
Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 15.5 A Rds On - Drain-Source Resistance 270 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 33.3 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 35 W
Channel Mode Enhancement Tradename MDmesh
Series STF15NM65N Brand STMicroelectronics
Fall Time 26 ns Product Type MOSFET
Rise Time 8 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 80 ns Typical Turn-On Delay Time 25 ns
Unit Weight 0.068784 oz

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