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STF10N62K3

Trans MOSFET N-CH 620V 8.4A 3-Pin(3+Tab) TO-220FP Tube

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Overview of STF10N62K3

The STF10N62K3 is a powerful and efficient MOSFET power transistor designed for high voltage and high current applications. With a maximum voltage rating of 620V and a continuous drain current of 8.4A, this N-channel transistor is capable of handling demanding power requirements with ease. Its low on-resistance of 0.68 ohms ensures minimal power loss and efficient operation in a variety of circuit configurations

Key Features

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Improved diode reverse recovery characteristics
  • Zener-protected

Application

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer STMicroelectronics Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 620 V Id - Continuous Drain Current 8.4 A
Rds On - Drain-Source Resistance 680 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 42 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 30 W Channel Mode Enhancement
Tradename SuperMESH Series STF10N62K3
Brand STMicroelectronics Configuration Single
Fall Time 31 ns Forward Transconductance - Min 6 S
Product Type MOSFET Rise Time 15 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 41 ns
Typical Turn-On Delay Time 14.5 ns Unit Weight 0.068784 oz

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