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2SCR523EBTL

SOT-416F Transistor

Quantity Unit Price(USD) Ext. Price
20 $0.018 $0.36
200 $0.015 $3.00
600 $0.014 $8.40
3000 $0.013 $39.00
9000 $0.012 $108.00
21000 $0.012 $252.00

Inventory:5,823

*The price is for reference only.
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Overview of 2SCR523EBTL

The 2SCR523EBTL is a high-voltage NPN silicon power transistor designed for use in power amplifier applications. It features high gain and low saturation voltage, making it suitable for high-power amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and usage of the 2SCR523EBTL transistor for a better understanding of its application.

Key Features

  • High Voltage Capability: The 2SCR523EBTL can handle high voltages, making it suitable for high-power applications.
  • Low Saturation Voltage: This transistor has a low saturation voltage, reducing power losses and improving efficiency.
  • High Gain: With high gain characteristics, the 2SCR523EBTL ensures effective amplification of signals.
  • Robust Construction: The transistor is built to withstand high voltages and currents, ensuring reliability in demanding conditions.

Note: For detailed technical specifications, please refer to the 2SCR523EBTL datasheet.

Application

  • Power Amplification: Ideal for use in power amplifiers to boost signals with high voltage requirements.
  • Switching Circuits: Suitable for switching applications where high voltage handling capability is essential.
  • Voltage Regulation: Can be employed in voltage regulation circuits to maintain stable output voltages.

Functionality

The 2SCR523EBTL transistor is designed to amplify power signals efficiently with its high gain and low saturation voltage characteristics, making it a reliable component in power electronics applications.

Usage Guide

  • Connections: Connect the Emitter, Base, and Collector pins as per the circuit requirements for proper operation.
  • Voltage Ratings: Ensure that the transistor's voltage ratings are not exceeded to prevent damage to the device.
  • Heat Dissipation: Provide adequate heat sinking to maintain the transistor within safe operating temperatures.

Frequently Asked Questions

Q: Can the 2SCR523EBTL be used for audio amplifier applications?
A: Yes, the 2SCR523EBTL is suitable for audio amplifier applications requiring high power and voltage amplification.

Equivalent

For similar functionalities, consider these alternatives to the 2SCR523EBTL:

  • 2N3055: A widely used high-power NPN transistor with similar characteristics to the 2SCR523EBTL.
  • MJ2955: Complementary PNP transistor to the 2SCR523EBTL, suitable for power amplifier designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case EMT-3F-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 50 V Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 100 mV
Maximum DC Collector Current 200 mA Pd - Power Dissipation 150 mW
Gain Bandwidth Product fT 350 MHz Maximum Operating Temperature + 150 C
Series 2SCR523EB Brand ROHM Semiconductor
DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 560 at 1 mA, 6 V
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Technology Si
Part # Aliases 2SCR523EB

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