2SCR523EBTL
SOT-416F Transistor
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
20 | $0.018 | $0.36 |
200 | $0.015 | $3.00 |
600 | $0.014 | $8.40 |
3000 | $0.013 | $39.00 |
9000 | $0.012 | $108.00 |
21000 | $0.012 | $252.00 |
Inventory:5,823
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Part Number : 2SCR523EBTL
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Package/Case : EMT3F-3
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Brand : Rohm Semiconductor
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Components Classification : Single Bipolar Transistors
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Datesheet : 2SCR523EBTL DataSheet (PDF)
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Series : 2SCR523EB
The 2SCR523EBTL is a high-voltage NPN silicon power transistor designed for use in power amplifier applications. It features high gain and low saturation voltage, making it suitable for high-power amplification tasks. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and usage of the 2SCR523EBTL transistor for a better understanding of its application. Note: For detailed technical specifications, please refer to the 2SCR523EBTL datasheet. Functionality The 2SCR523EBTL transistor is designed to amplify power signals efficiently with its high gain and low saturation voltage characteristics, making it a reliable component in power electronics applications. Usage Guide Q: Can the 2SCR523EBTL be used for audio amplifier applications? For similar functionalities, consider these alternatives to the 2SCR523EBTL:Overview of 2SCR523EBTL
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the 2SCR523EBTL is suitable for audio amplifier applications requiring high power and voltage amplification.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | SMD/SMT | Package / Case | EMT-3F-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 50 V | Collector- Base Voltage VCBO | 50 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 100 mV |
Maximum DC Collector Current | 200 mA | Pd - Power Dissipation | 150 mW |
Gain Bandwidth Product fT | 350 MHz | Maximum Operating Temperature | + 150 C |
Series | 2SCR523EB | Brand | ROHM Semiconductor |
DC Collector/Base Gain hfe Min | 120 | DC Current Gain hFE Max | 560 at 1 mA, 6 V |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 3000 |
Subcategory | Transistors | Technology | Si |
Part # Aliases | 2SCR523EB |
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