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STD18N55M5

Trans MOSFET N-CH Si 550V 16A 3-Pin(2+Tab) DPAK T/R

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Overview of STD18N55M5

The STD18N55M5 is a power MOSFET transistor designed for high-power switching applications. It features a low on-state resistance and high current capability, making it suitable for use in power supplies, motor control, and other demanding applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the STD18N55M5 MOSFET for a visual representation.

Key Features

  • High Power Switching: The STD18N55M5 can handle high current and voltage levels for efficient power switching applications.
  • Low On-State Resistance: With a low RDS(on) value, this MOSFET minimizes power losses and improves efficiency.
  • Robust Design: Designed to withstand high levels of stress and temperature, ensuring reliability in demanding environments.
  • Fast Switching Speed: The STD18N55M5 offers fast switching times, allowing for high-speed operation in various applications.
  • Enhanced Thermal Performance: The MOSFET comes in a package with enhanced thermal characteristics for improved heat dissipation.

Note: For detailed technical specifications, please refer to the STD18N55M5 datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits for efficient power switching.
  • Motor Control: Suitable for motor control applications due to its high current and voltage handling capability.
  • Inverters: Used in inverter circuits for converting DC power to AC power with high efficiency.

Functionality

The STD18N55M5 MOSFET is designed to facilitate high-power switching operations with low on-state resistance and fast switching speeds, making it a reliable choice for various power electronics applications.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the driving circuit for controlling the MOSFET switching operation.
  • Drain and Source Connections: Connect the drain (D) and source (S) pins in the circuit according to the application requirements.

Frequently Asked Questions

Q: Is the STD18N55M5 suitable for high-temperature environments?
A: Yes, the STD18N55M5 is designed to withstand high temperatures and is suitable for use in demanding environments.

Equivalent

For similar functionalities, consider these alternatives to the STD18N55M5:

  • STD20N50: A power MOSFET with comparable performance characteristics to the STD18N55M5 but with different voltage and current ratings.
  • IRF3205: This MOSFET offers similar power handling capabilities and switching characteristics to the STD18N55M5.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series MDmesh™ V Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 192mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1260 pF @ 100 V
Power Dissipation (Max) 110W (Tc) Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package DPAK
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63 Base Product Number STD18

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