• packageimg
packageimg

STD15P6F6AG

Trans MOSFET P-CH 60V 10A Automotive 3-Pin(2+Tab) DPAK T/R

Quantity Unit Price(USD) Ext. Price
1 $0.463 $0.46
10 $0.379 $3.79
30 $0.342 $10.26
100 $0.297 $29.70
500 $0.265 $132.50
1000 $0.253 $253.00

Inventory:7,073

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for STD15P6F6AG using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of STD15P6F6AG

The STD15P6F6AG is an N-channel 600V power MOSFET designed for high-voltage switching applications. With a low on-resistance and high breakdown voltage, this MOSFET is suitable for power management and conversion in various electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the STD15P6F6AG MOSFET for a visual representation.

Key Features

  • N-Channel Power MOSFET: The STD15P6F6AG is an N-channel MOSFET capable of handling high voltages for power switching.
  • High Breakdown Voltage: With a 600V breakdown voltage, this MOSFET is suitable for high-voltage applications.
  • Low On-Resistance: The MOSFET features low on-resistance for efficient power management and minimal power loss.
  • Fast Switching Speed: The STD15P6F6AG offers fast switching speeds, making it ideal for high-frequency applications.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation, ensuring stable operation under high power conditions.

Note: For detailed technical specifications, please refer to the STD15P6F6AG datasheet.

Application

  • Power Management: Ideal for power switching and management in industrial and electronic systems.
  • Motor Control: Suitable for motor control applications requiring high-voltage switching.
  • Inverter Systems: Used in inverter systems for converting and controlling high-power signals.

Functionality

The STD15P6F6AG is a high-voltage N-channel MOSFET designed for efficient power switching and management. It provides reliable performance in a variety of high-power applications.

Usage Guide

  • Gate Voltage: Apply the appropriate voltage to the Gate (G) pin to control the switching of the MOSFET.
  • Load Connection: Connect the load to the Drain (D) pin with proper current and voltage ratings.
  • Source Connection: Ground the Source (S) pin for proper circuit operation.

Frequently Asked Questions

Q: What is the maximum voltage rating of the STD15P6F6AG?
A: The STD15P6F6AG has a maximum voltage rating of 600V, suitable for high-voltage applications.

Q: Is the STD15P6F6AG suitable for high-frequency switching?
A: Yes, the STD15P6F6AG offers fast switching speeds, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the STD15P6F6AG:

  • IRFP460: An N-channel power MOSFET with similar voltage and current ratings for high-power applications.
  • FQP50N06: This MOSFET offers comparable performance to the STD15P6F6AG with slightly different specifications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer STMicroelectronics Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TO-252-3
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 10 A
Rds On - Drain-Source Resistance 160 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 6.4 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 35 W Channel Mode Enhancement
Qualification AEC-Q101 Tradename STripFET
Series STD15P6F6AG Brand STMicroelectronics
Configuration Single Fall Time 3.7 ns
Product Type MOSFET Rise Time 5.3 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 P-Channel Power MOSFET Typical Turn-Off Delay Time 14 ns
Typical Turn-On Delay Time 64 ns Unit Weight 0.011640 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

IXXX200N65B4

IXXX200N65B4

Trans IGBT Chip N-CH 650V 370A 1150W 3-Pin(3+Tab) PLUS 247
RU1C001UNTCL

RU1C001UNTCL

Single-element silicon transistor ideal for implementing as a switch or amplifier in electronic circuits
APT30GN60BG

APT30GN60BG

N-Channel Insulated Gate Bipolar Transistor
NTE283

NTE283

Robust TO-package withstands harsh environments reliabl
MRFE6S9125NBR1

MRFE6S9125NBR1

LDMOS RF Power Transistor with frequency range of 865-960 MHz
IRGPH40F

IRGPH40F

High durability IGBT chip component
IXTA140P05T

IXTA140P05T

Effect Transistor Power
IRF840ASPBF

IRF840ASPBF

Featuring a voltage tolerance of 500V and a current capacity of 8A, the IRF840ASPBF MOSFET exhibits an on-resistance of 850mΩ at 4
IRFS7730PBF

IRFS7730PBF

Single N-Channel MOSFET for high voltage applications
DTA014EEBTL

DTA014EEBTL

These transistors represent ROHM's pioneering entry into the digital market