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STB35N65M5

Trans MOSFET N-CH Si 650V 27A 3-Pin(2+Tab) D2PAK T/R

Inventory:9,402

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Overview of STB35N65M5

Product STB35N65M5 is a cutting-edge N-channel MDmesh™ V Power MOSFET, designed using a groundbreaking vertical process technology unique to STMicroelectronics. By integrating this technology with the established PowerMESH™ horizontal layout structure, this MOSFET boasts an exceptionally low on-resistance that outperforms traditional silicon-based Power MOSFETs. This makes it perfect for applications demanding high power density and superior efficiency

Key Features

  • Low power consumption and noise
  • Flexible design for various applications
  • Simplifies system integration processes

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series MDmesh™ V Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 98mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 83 nC @ 10 V
Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 3750 pF @ 100 V
Power Dissipation (Max) 160W (Tc) Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package D2PAK
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Base Product Number STB35

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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