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IRF1310NSPBF

N-Channel Power MOSFET with 100V Voltage Rating

Inventory:7,070

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Overview of IRF1310NSPBF

The IRF1310NSPBF is a N-channel power MOSF designed for high-power switching applications. This MOSFET offers superior performance and efficiency, making it suitable for various power management and circuit designs.

Pinout

(Note: The pin configuration below is a general representation Refer to the specific datasheet for precise details.)

  • G: Gate
    • D: Drain
  • S: Source

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TO-252-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 42 A Rds On - Drain-Source Resistance 36 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 73.3 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 3.8 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Single
Fall Time 40 ns Height 2.3 mm
Length 6.5 mm Product Type MOSFET
Rise Time 56 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type HEXFET Power MOSFET Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 11 ns Width 6.22 mm
Part # Aliases SP001561414 Unit Weight 0.011640 oz

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