SST2907AT116
-60V -0.6A Rating
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
20 | $0.018 | $0.36 |
200 | $0.016 | $3.20 |
600 | $0.015 | $9.00 |
3000 | $0.014 | $42.00 |
9000 | $0.013 | $117.00 |
21000 | $0.013 | $273.00 |
Inventory:4,705
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : SST2907AT116
-
Package/Case : SST3
-
Brand : Rohm Semiconductor
-
Components Classification : Single Bipolar Transistors
-
Datesheet : SST2907AT116 DataSheet (PDF)
-
Series : SST2907A
Overview of SST2907AT116
The SST2907AT116 exemplifies the dedication to excellence that defines this product range. With a reputation for superior performance and durability, these products have earned the trust of customers worldwide. Whether you need a compact solution for a tight space or a powerful package for demanding applications, this lineup has you covered
Key Features
- 1) BVCEO<-60V (IC=-10mA)
- 2) Complements the UMT2222A / SST2222A /
- MMST2222A / PN2222A.
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ROHM CO LTD |
Package Description | SMALL OUTLINE, R-PDSO-G3 | Pin Count | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 53 Weeks, 1 Day | Samacsys Manufacturer | ROHM Semiconductor |
Collector Current-Max (IC) | 0.6 A | Collector-Base Capacitance-Max | 7 pF |
Collector-Emitter Voltage-Max | 60 V | Configuration | SINGLE |
DC Current Gain-Min (hFE) | 50 | JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e1 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | PNP |
Power Dissipation-Max (Abs) | 0.2 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | TIN SILVER COPPER |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 200 MHz |
Turn-off Time-Max (toff) | 100 ns | Turn-on Time-Max (ton) | 50 ns |
VCEsat-Max | 0.6 V |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![RSS060P05FU6TB](/img/package/so5.jpg)
RSS060P05FU6TB
Pch MOSFET Load Switching with 45V and 6A
![BSS138BKT116](/img/package/sot23.jpg)
BSS138BKT116
Small-signal MOSFET for low-power applications, with N-channel design, rated at 60 volts and 400 milliamps."
![BSS84T116](/img/package/sot23.jpg)
BSS84T116
0.23A drain current
![BSS84WAHZGT106](/img/package/sot23.jpg)
BSS84WAHZGT106
Automotive small signal MOSFET, SOT-323, Pch -60V -0.21A
![BSS138BWAHZGT106](/img/package/sot23.jpg)
BSS138BWAHZGT106
N-channel 60V 0.38A automotive transistor
![SSTA56HZGT116](/img/package/sot23.jpg)
SSTA56HZGT116
80V PNP Bipolar Transistor
![SST3904HZGT116](/img/package/sot23.jpg)
SST3904HZGT116
40V NPN Bipolar Transistors
![RSS130N03HZGTB](/img/package/sop8.jpg)
RSS130N03HZGTB
Robust 30V/13A rating for powering complex electrical systems in vehicles
![RSS095N05HZGTB](/img/package/sop8.jpg)
RSS095N05HZGTB
Reliable and Environmentally Friendly, Shipped Promptly
![RSS070N05HZGTB](/img/package/sop8.jpg)
RSS070N05HZGTB
High-power device for efficient DC/DC conversio
![FQPF12P20](/img/package/to220.jpg)
FQPF12P20
200V P-Channel QFET MOSFET
![FS50R06YE3](/img/package/module.jpg)
FS50R06YE3
IGBT Modules FS50R06YE3, designed with N-channel configuration for 600V and 60A applications
![IRF630NPBF](/img/package/to220.jpg)
IRF630NPBF
MOSFET with a voltage rating of 200V, a current rating of 9.5A, a resistance of 300mOhm, and a charge of 23.3nC
![CGH60008D-GP4](/img/product.png)
CGH60008D-GP4
High-power device for amplifying RF signals in various applications
![SUB75P05-08](/img/package/to263.jpg)
SUB75P05-08
3-pin, 2+Tab package design for easy installation
![IRFB7440PBF](/img/package/to220.jpg)
IRFB7440PBF
IRFB7440PBF is a N-channel MOSFET with a voltage rating of 40V and a current rating of 120A, featuring a low on-resistance of 2.5mΩ at 10V
![PSMN025-100D](/img/package/to252.jpg)
PSMN025-100D
100V Plastic DPAK-3
![HGT1S10N120BNST](/img/package/d2pak3.jpg)
HGT1S10N120BNST
Insulated Gate Bipolar Transistor, 1200V, Non-Punch Through
![IRF7910PBF](/img/package/soic8.jpg)
IRF7910PBF
MOSFET with a dual N-channel configuration
![IPD25N06S4L30ATMA2](/img/package/dpak.jpg)
IPD25N06S4L30ATMA2
The IPD25N06S4L30ATMA2 is a N-channel MOSFET rated for 60V and 25A, packaged in a TO-252 format and provided in Tape and Reel packaging