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SSM6J801R,LF

Trans MOSFET P-CH SiC 20V 6A 6-Pin TSOP-F T/R

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Overview of SSM6J801R,LF

P-Channel 20 V 6A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series SSM6J801 Product Status Active
FET Type P-Channel Technology Si
Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 32.5mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 12.8 nC @ 4.5 V
Vgs (Max) +6V, -8V Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 10 V
Power Dissipation (Max) 1.5W (Ta) Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 6-TSOP-F
Package / Case TSOP-6 Base Product Number SSM6J801
Manufacturer Toshiba Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 32.5 mOhms Vgs - Gate-Source Voltage - 8 V, + 6 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 12.8 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 3 W Channel Mode Enhancement
Tradename U-MOSVI Brand Toshiba
Configuration Single Forward Transconductance - Min 4.5 S
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 107 ns Typical Turn-On Delay Time 32 ns
Unit Weight 0.000705 oz

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