SSM3K361TU,LF
Integrated Circuit Voltage Reference Shunt, 1.25V, SOT23-3 Package"
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $0.341 | $0.34 |
| 200 | $0.136 | $27.20 |
| 500 | $0.131 | $65.50 |
| 1000 | $0.129 | $129.00 |
Inventory:5,477
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : SSM3K361TU,LF
-
Package/Case : UFM
-
Brand : TOSHIBA
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : SSM3K361TU,LF DataSheet (PDF)
-
Series : SSM3K36
Overview of SSM3K361TU,LF
N-Channel 100 V 3.5A (Ta) 1W (Ta) Surface Mount UFM
Application
SWITCHING
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H | Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 2A, 10V | Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 4.5 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 15 V | FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) | Operating Temperature | 175°C |
| Mounting Type | Surface Mount | Supplier Device Package | UFM |
| Package / Case | 3-SMD, Flat Lead | Base Product Number | SSM3K361 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
SSM3J115TU
High-power transistor for demanding application
SSM3K119TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K337R
Automotive-grade N-channel MOSFET with a maximum voltage of 38V and current rating of 2A
SSM3K341R,LF
SSM3K341R,LF is a high-performance N-channel MOSFET made of silicon, specifically designed for use in automotive electronics
SSM6J53FE
General-purpose FET suitable for a wide range of device
SSM6N55NU
Automotive component
SSM6N58NU
Specifications: N-channel silicon MOSFET, 30 volts, 4 amps, 6-pin UDFN EP package
SSM3K318R,LF
SSM3K318R,LF is a SOT23F-packaged N-channel MOSFET designed to operate at 60 volts with a current rating of 2.5A
SSM3J120TU
Compact pin package ideal for space-constrained designs
ZXMP3A13FTA
ZXMP3A13FTA product description: 30V P-Channel UMOS MOSFET
BUV47
A high-performance device offering efficient power amplification and switching applications
DTC144EETL
Tape and Reel Packaged NPN Bipolar Junction Transistor Suitable for Digital Circuits with 100mA Current Rating
2N7000KL-TR1-E3
MOSFET suitable for circuits requiring 60V and 0.47A specifications
DSC200100L
Signal transistors with glass wing - bipolar transistors (BJT) surface mount 2.9x2.8mm
IXFN90N85X
Operating with a gate-source voltage of 10V and low leakage current of 5.5V at 8mA
MTM232270LBF
The MOSFET N-channel transistor MTM232270LBF by Panasonic is a high-performance component, capable of handling 2A of current and 20V of voltage
ZXTN25012EFHTA
SOT-23 ZXTN250 Series NPN Transistor with 1.25 W Power, 12 V Voltage, 6 A Current
TSM2312CX
TSM2312CX power MOSFET
IRFH7446TRPBF
85 A, 40 V, 8-Pin PQFN