SI3437DV-T1-E3
pin SOT-23 package
Inventory:6,126
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : SI3437DV-T1-E3
-
Package/Case : SOP-6
-
Brands : Siliconix
-
Components Categories : Single FETs, MOSFETs
-
Datesheet : SI3437DV-T1-E3 DataSheet (PDF)
The SI3437DV-T1-E3 is an N-channel enhancement mode MOSFET designed for use in DC-DC converters, power management, and load switching applications. It features a low on-resistance and high switching speed, making it ideal for high-efficiency power conversion. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Incorporate a circuit diagram that illustrates the connections and operation of the SI3437DV-T1-E3 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the SI3437DV-T1-E3 datasheet. Functionality The SI3437DV-T1-E3 MOSFET is designed to facilitate efficient power management and conversion in a wide range of electronic applications. Its low on-resistance and high switching speed contribute to high-performance power circuit designs. Usage Guide Q: What is the maximum voltage and current rating of the SI3437DV-T1-E3? Q: Is the SI3437DV-T1-E3 suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the SI3437DV-T1-E3:Overview of SI3437DV-T1-E3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The SI3437DV-T1-E3 can typically handle a voltage of X volts and a current of Y amps. For detailed specifications, please refer to the datasheet.
A: Yes, the SI3437DV-T1-E3's high-speed switching capabilities make it suitable for high-frequency power conversion and switching applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSOP-6 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 150 V |
Id - Continuous Drain Current | 1.4 A | Rds On - Drain-Source Resistance | 750 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 12.2 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 3.2 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI3 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 12 ns |
Forward Transconductance - Min | 4.5 S | Product Type | MOSFET |
Rise Time | 11 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 28 ns | Typical Turn-On Delay Time | 9 ns |
Part # Aliases | SI3437DV-T1-BE3 SI3437DV-E3 | Unit Weight | 0.000705 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![SIR871DP-T1-GE3](/files/uploads/product/s/cdc333502e0b497585e7dea1ada4903a.webp)
SIR871DP-T1-GE3
MOSFET -100V Vds 20V Vgs SO-8
![SI2337DS-T1-GE3](/files/uploads/product/s/2dbec00bef324bd9aebbe549c4dda4fa.webp)
SI2337DS-T1-GE3
SI2337DS-T1-GE3 P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay
![SI7252DP-T1-GE3](/files/uploads/product/s/db03657e614549c79e8422838b1dc7d7.webp)
SI7252DP-T1-GE3
SI7252DP-T1-GE3 Power Field-Effect Transistor
![SI1304BDL-T1-E3](/files/uploads/product/s/6945804b344547d4957db75beb06c37b.webp)
SI1304BDL-T1-E3
Recommended Alternative: 78-SI1308EDL-T1-GE3
![SI2305CDS-T1-GE3](/files/uploads/product/s/8d4a606b25894cb4bd74d2be38999e8b.webp)
SI2305CDS-T1-GE3
Small Signal Field-Effect Transistor, P-Channel Silicon MOSFET, 1-Element
![SI2319DS-T1-E3](/files/uploads/product/s/b1b9f988d0774b85ac6dcf0ece8f1bb1.webp)
SI2319DS-T1-E3
Surface-mount device in SOT23 package
![SI7232DN-T1-GE3](/files/uploads/product/s/6cb8eeea562e43a0b09708692fd3cf15.webp)
SI7232DN-T1-GE3
Dual N-Channel 20 V (D-S) MOSFET SI7232DN-T1-GE3
![SI4435DYTRPBF](/files/uploads/product/s/b74f14aad79f40a2a62798134880e138.webp)
SI4435DYTRPBF
Power MOSFET with Ultra-Low 0.020 Ohm Resistance Voltage
![LSIC1MO120E0160](/img/package/to247.jpg)
LSIC1MO120E0160
High-current Field-Effect Transistor
![LSIC1MO120E0120](/img/package/to247.jpg)
LSIC1MO120E0120
Power dissipation rating of 139W at a case temperature of 25°C