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SI3437DV-T1-E3

pin SOT-23 package

Inventory:6,126

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Overview of SI3437DV-T1-E3

The SI3437DV-T1-E3 is an N-channel enhancement mode MOSFET designed for use in DC-DC converters, power management, and load switching applications. It features a low on-resistance and high switching speed, making it ideal for high-efficiency power conversion.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Control terminal for turning the MOSFET on and off.
  • Drain (D): Connection to the positive voltage supply in the circuit.
  • Source (S): Connection to the load or ground, depending on the circuit configuration.

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the SI3437DV-T1-E3 MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The SI3437DV-T1-E3 offers a low on-resistance, minimizing power losses and improving efficiency.
  • High Switching Speed: With its fast switching characteristics, this MOSFET enables high-frequency operation in power conversion circuits.
  • Enhancement Mode Design: The enhancement mode ensures easy and precise control of the MOSFET's conduction, making it suitable for various applications.
  • Wide Operating Voltage Range: Operates effectively within a broad voltage range, enhancing its versatility in different power management systems.
  • High Current Handling Capacity: Capable of handling substantial load currents, making it suitable for high-power applications.

Note: For detailed technical specifications, please refer to the SI3437DV-T1-E3 datasheet.

Application

  • DC-DC Converters: Ideal for use in step-up, step-down, and voltage inverting DC-DC converter circuits.
  • Power Management: Suitable for power distribution, load switching, and battery charging systems.
  • Motor Control: Used in motor drive circuits, power inverters, and brushed DC motor controls.

Functionality

The SI3437DV-T1-E3 MOSFET is designed to facilitate efficient power management and conversion in a wide range of electronic applications. Its low on-resistance and high switching speed contribute to high-performance power circuit designs.

Usage Guide

  • Connection: Connect the gate, drain, and source pins of the MOSFET according to the application's voltage and current requirements.
  • Gate Control: Apply appropriate gate-source voltage for turning the MOSFET on and off as per the specific circuit operation.
  • Heat Dissipation: Consider thermal management to dissipate heat generated during high-power operation.

Frequently Asked Questions

Q: What is the maximum voltage and current rating of the SI3437DV-T1-E3?
A: The SI3437DV-T1-E3 can typically handle a voltage of X volts and a current of Y amps. For detailed specifications, please refer to the datasheet.

Q: Is the SI3437DV-T1-E3 suitable for high-frequency switching applications?
A: Yes, the SI3437DV-T1-E3's high-speed switching capabilities make it suitable for high-frequency power conversion and switching applications.

Equivalent

For similar functionalities, consider these alternatives to the SI3437DV-T1-E3:

  • SI2302DS: This is another N-channel MOSFET with comparable characteristics suitable for power management and DC-DC conversion.
  • IRF5305PBF: An alternative N-channel MOSFET known for its high current capacity and low on-resistance, suitable for power control applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TSOP-6 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 1.4 A Rds On - Drain-Source Resistance 750 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 12.2 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 3.2 W
Channel Mode Enhancement Tradename TrenchFET
Series SI3 Brand Vishay Semiconductors
Configuration Single Fall Time 12 ns
Forward Transconductance - Min 4.5 S Product Type MOSFET
Rise Time 11 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 28 ns Typical Turn-On Delay Time 9 ns
Part # Aliases SI3437DV-T1-BE3 SI3437DV-E3 Unit Weight 0.000705 oz

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