RV8L002SNHZGG2CR
Trans MOSFET N-CH 60V 0.25A Automotive 3-Pin DFN-W
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.183 | $0.18 |
200 | $0.071 | $14.20 |
500 | $0.068 | $34.00 |
1000 | $0.067 | $67.00 |
Inventory:9,583
- 90-day after-sales guarantee
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Part Number : RV8L002SNHZGG2CR
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Package/Case : DFN-3
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Brands : Rohm Semiconductor
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Components Categories : Single FETs, MOSFETs
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Datesheet : RV8L002SNHZGG2CR DataSheet (PDF)
Overview of RV8L002SNHZGG2CR
The RV8L002SNHZG ultra-compact MOSFET is engineered to provide unmatched mounting reliability, making it an ideal choice for automotive applications. With AEC-Q101 qualification, this MOSFET is designed to ensure automotive-grade reliability and performance even in the most challenging conditions. Notably, ROHM's original Wettable Flank formation technology guarantees consistent solder quality, particularly for bottom electrode type products, allowing for easy verification of solder conditions after mounting using automatic inspection machines. This feature is invaluable for manufacturers looking to enhance production efficiency and uphold superior quality. In automotive components such as ECU and ADAS camera modules, where miniaturization is pivotal, the RV8L002SNHZG MOSFET delivers high-quality performance and reliability. With its advanced design and innovative technology, the RV8L002SNHZG sets a new standard for compact yet supremely reliable MOSFET solutions in automotive applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Status | Active | FET Type | N-Channel |
Technology | Si | Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) | Rds On (Max) @ Id, Vgs | 2.4Ohm @ 250mA, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 1mA | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 15 pF @ 25 V | Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | 150°C (TJ) | Grade | Automotive |
Qualification | AEC-Q101 | Mounting Type | Surface Mount |
Supplier Device Package | DFN1010-3W | Package / Case | DFN-3 |
Base Product Number | RV8L002 | Manufacturer | ROHM Semiconductor |
Product Category | MOSFET | RoHS | Details |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 250 mA | Rds On - Drain-Source Resistance | 2.4 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.3 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1 W | Channel Mode | Enhancement |
Brand | ROHM Semiconductor | Fall Time | 28 ns |
Forward Transconductance - Min | 250 mS | Product Type | MOSFET |
Rise Time | 5 ns | Factory Pack Quantity | 100 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 18 ns | Typical Turn-On Delay Time | 3.5 ns |
Part # Aliases | RV8L002SNHZG |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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