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RV4C020ZPHZGTCR1

20V Transistor MOSFET suitable for high-speed switching and low-voltage logic in cars, with excellent AEC-Q101 compliance

Quantity Unit Price(USD) Ext. Price
1 $0.266 $0.27
200 $0.103 $20.60
500 $0.099 $49.50
1000 $0.098 $98.00

Inventory:8,506

*The price is for reference only.
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Overview of RV4C020ZPHZGTCR1

Unveiling the RV4C020ZPHZGTCR1, a revolutionary ultra-compact MOSFET engineered specifically for automotive-grade applications, offering unparalleled mounting reliability for a diverse range of vehicle components. Featuring an electrode height of 130μm on the side of the package, this MOSFET incorporates cutting-edge Wettable Flank formation technology, ensuring superior solder quality essential for vehicle applications. Its ability to deliver consistent solder quality, even for bottom electrode type products, simplifies the verification of solder conditions post-mounting, streamlining the integration process within automotive systems. The RV4C020ZPHZGTCR1 facilitates enhanced miniaturization in automotive devices, particularly in advanced driver assistance systems (ADAS) camera modules, showcasing its adaptability and performance in modern automotive technologies. As part of an 8-channel power tree Reference Design tailored for automotive ADAS and Info-Display applications, this MOSFET underscores its relevance and reliability in shaping the future of automotive innovation

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type P-Channel
Technology Si Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 260mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 4.5 V Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 80 pF @ 10 V Power Dissipation (Max) 1.5W (Ta)
Operating Temperature 150°C (TJ) Grade Automotive
Qualification AEC-Q101 Mounting Type Surface Mount, Wettable Flank
Supplier Device Package DFN1616-6W Package / Case DFN1616-6W
Base Product Number RV4C020 Manufacturer ROHM Semiconductor
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 2 A Rds On - Drain-Source Resistance 260 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1.3 V
Qg - Gate Charge 2 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.5 W
Channel Mode Enhancement Brand ROHM Semiconductor
Configuration Single Fall Time 1500 ns
Product Type MOSFET Rise Time 120 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type Small Signal MOSFET Typical Turn-Off Delay Time 3800 ns
Typical Turn-On Delay Time 10 ns Part # Aliases RV4C020ZPHZG

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