RGTH60TS65DGC11
50V 30A power transistors
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $1.679 | $1.68 |
| 200 | $0.651 | $130.20 |
| 450 | $0.628 | $282.60 |
| 900 | $0.617 | $555.30 |
Inventory:6,270
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Part Number : RGTH60TS65DGC11
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Package/Case : TO-247-3
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Brand : Rohm Semiconductor
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Components Classification : Single IGBTs
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Datesheet : RGTH60TS65DGC11 DataSheet (PDF)
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Series : RGTH60TS65
Overview of RGTH60TS65DGC11
IGBT Trench Field Stop 650 V 58 A 194 W Through Hole TO-247N
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 650 V |
| Collector-Emitter Saturation Voltage | 1.6 V | Maximum Gate Emitter Voltage | - 30 V, 30 V |
| Continuous Collector Current at 25 C | 58 A | Pd - Power Dissipation | 194 W |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 175 C |
| Series | RGTH60TS65 | Brand | ROHM Semiconductor |
| Continuous Collector Current | 30 A | Continuous Collector Current Ic Max | 58 A |
| Gate-Emitter Leakage Current | +/- 200 nA | Operating Temperature Range | - 40 C to + 175 C |
| Product Type | IGBT Transistors | Factory Pack Quantity | 450 |
| Subcategory | IGBTs | Part # Aliases | RGTH60TS65D |
| Unit Weight | 0.070548 oz |
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